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← Back to: eFuse / Hot-Swap / OR-ing Protection

Intro — What This Page Solves

PoE ports must balance three tensions: IEEE detection/classification integrity, surge robustness (including cross-pair), and low residual / low capacitance so differential signaling and MPS remain intact. A layered route works: shed energy with GDT/TSS, reduce residual with low-Rdyn TVS, then finish with a low-C ESD array near the RJ-45. Current limiting, soft-start, and metering must stay MPS-safe.

Detect / Classification / MPS Keep the 25 kΩ signature, class current, and MPS unperturbed.
CM / DM Common-mode vs differential surge paths require split handling.
Residual Voltage Window Design for a bounded residual over time/frequency.
C_eq@100 MHz Low-C arrays must fit the differential budget.
Power Policing & SOA Limit profiles align with PoE budget and device SOA.
High-level PoE design tensions and solution path Three overlapping circles (detect/class, surge robustness, low-cap/low-residual) with arrows: Energy shed → Residual clamp → Low-C ESD. Note: metering/eFuse must remain MPS-safe. PoE Protection — Three Design Tensions IEEE Detect / Class Surge Robustness Low-Cap / Low-Residual Energy shed → GDT/TSS Residual clamp → low-Rdyn TVS Finish → Low-C ESD (near RJ-45) Keep metering & eFuse policies MPS-safe
Figure F0 — Three tensions and the layered solution path (GDT/TSS → low-Rdyn TVS → Low-C ESD)

Standards Snapshot

This chapter aligns IEEE 802.3 (af/at/bt) rules for detection, classification, and MPS with the EMC trio IEC 61000-4-2 / -4-4 / -4-5. We translate clauses into design hard constraints: leakage and capacitance on detect/class paths, residual-voltage bandwidth for surge cascades, and MPS-safe filtering for metering/limits. Use the four quantified parameters below to keep ports compliant and robust.

IEEE 802.3 essentials (af / at / bt)

Detection window

Keep the 25 kΩ signature intact. Clamp networks on the detect path must not add bias via leakage or biasing dividers.

Classification current

Ensure classification accuracy; avoid series impedance or shunts that skew the current window.

Maintain Power Signature (MPS)

RC filters and comparators for metering/limits must not mask DC or pulse-type MPS.

IEC test set (port application)

IEC 61000-4-2 ESD

Contact/air to pins/shield. Observe residual to PHY; array capacitance must stay within differential budget.

IEC 61000-4-4 EFT

Burst coupling can jitter power rules. Debounce policy thresholds and verify PG/FAULT semantics.

IEC 61000-4-5 Surge

Handle CM energy via GDT/TSS then limit DM residual with low-Rdyn TVS; ESD array finalizes the window.

Carrier/industry specs (e.g., GR-1089) can require tougher cross-pair conditions—treat them as high-tier targets.

Four numbers you must quantify

C_eq @100 MHz

Array + trace + magnetics must ≤ differential budget to preserve eye/MPS.

I_leak (detect/class path)

Total leakage must not bias signature or classification windows.

Vc_band (residual band)

Time–frequency residual after cascade; choose TVS by residual band, not only VRWM.

MPS_edge

RC/ADC bandwidth must keep DC/pulse MPS visible while rejecting bursts.

PoE standards map: IEEE detect/class/MPS aligned with IEC ESD/EFT/Surge Left: IEEE cards (detect/class/MPS). Center: Port Under Test with RJ-45, magnetics, clamps, eFuse, meter. Right: IEC cards and injection paths with observation points. Bottom: four required parameters (C_eq, I_leak, Vc_band, MPS_edge). IEEE Port Under Test IEC Detection window Keep 25 kΩ signature; leakage must not bias. Classification Avoid series/shunt that skews current. MPS RC/ADC must keep DC/pulse signature visible. RJ-45 → Magnetics → Clamps → eFuse/HS → Meter RJ-45 Mag GDT/TSS + TVS eFuse/HS Meter Residual band & MPS-safe filtering ESD (-4-2) Pins / shield injection; observe PHY residual. EFT (-4-4) Burst can flip power rules; debounce. Surge (-4-5) CM/DM, line-to-line / line-to-ground paths. Quantify for every port: C_eq@100MHz I_leak Vc_band MPS_edge
Figure F1 — Minimal standards map linking IEEE detect/class/MPS to IEC ESD/EFT/Surge with required design parameters

BOM remarks (copy & paste)

  • PoE clamps must meet the residual-band spec without biasing IEEE detection/classification.
  • Use low-cap ESD arrays; verify C_eq@100 MHz ≤ differential budget.
  • Metering filter and eFuse/HS thresholds must be MPS-safe per this page.

Architecture — PSE-Side Port Protection

PSE ports should route common-mode energy to chassis at a single point, keep the detect/class path unbiased, and use a GDT/TSS → low-Rdyn TVS cascade ahead of the power-path eFuse/Hot-Swap. Metering must be MPS-safe whether you sense by shunt or magnetic pickup. This section provides placement order, distance guidance, and current-limit policy aligned to PoE budgets.

PSE-side architecture overview Shield-to-chassis single-point for CM energy; magnetics; GDT/TSS to TVS cascade; eFuse/Hot-Swap; MPS-safe metering; signal/control domain. Domain colors: Clamp, Power-path, Metering, Signal. Signal Domain Clamp Domain Power-Path Domain Metering / Control RJ-45 Magnetics Shield→Chassis (single-point) GDT/TSS Low-Rdyn TVS Vc_band target eFuse/HS Ilim/Timer dV/dt policy Shunt Magnetic MPS-safe filter PG / FAULT / INT Keep detect/class path unbiased (I_leak & C_eq limits) Set bandwidth so MPS edges survive, bursts are rejected
Figure F2 — PSE-side architecture: Shield→Chassis single-point, GDT/TSS→TVS, eFuse/Hot-Swap, and MPS-safe metering

Placement & distance guidance

  • Shield to chassis: single-point near the RJ-45; avoid multi-point straps on signal ground.
  • Clamp cascade close to magnetics/RJ-45 with short, symmetric routes; minimize loop inductance.
  • Low-C ESD arrays on data pairs at the connector exit; keep C_eq@100 MHz within differential budget.
  • Metering before/after eFuse: ensure detect/class/MPS path remains unbiased; validate I_leak and filter corner.

Shield-to-Chassis options

Direct bond

Best CM energy drain; watch ESD return paths and avoid DC ground loops.

RC / small inductor

Blocks LF/DC, passes HF surges; tune R/C or L to your chassis impedance.

Single-point via short strap

Keep short and wide; avoid multi-point ties that raise uncertainty.

eFuse/Hot-Swap limit policy vs PoE class

af (Class 0–3)
Ilim sized to budget + margin; short Timer with hiccup for large Cin.
at (Class 4)
Coordinate foldback with precharge; dV/dt to prevent PHY brown-out.
bt (Class 5–8)
Check SOA at cold-start; allow thermal derate; ensure MPS not masked by filters.

Architecture — PD-Side Front-End

The PD front-end chooses between a bridge and an ideal-diode controller, then applies the same GDT/TSS → low-Rdyn TVS → low-C ESD cascade before a soft-start eFuse/Hot-Swap. MPS-friendly metering and filtering must keep DC/pulse MPS visible. Long cable plus large Cin needs staged precharge and slope control.

PD-side front-end overview RJ-45 and magnetics into bridge/ideal diode; surge cascade; eFuse soft-start; MPS-friendly metering. Annotations for ΔV_trip and I_rev, and shaded MPS-safe region. Connector / Mag Front-End (Bridge / Ideal-Diode) Clamp Cascade eFuse / Hot-Swap Metering RJ-45 Mag Bridge Ideal-Diode ΔV_trip, I_rev GDT/TSS Low-Rdyn TVS eFuse/HS Soft-start dV/dt Meter MPS-safe band Long cable + large C_in → precharge then slope start
Figure F3 — PD front-end with bridge/ideal-diode, surge cascade, soft-start eFuse, and MPS-friendly metering

Bridge vs Ideal-Diode (selection notes)

Bridge

Robust, simple; higher forward loss; no active I_rev control; slower switchover.

Ideal-Diode

Low drop; fast priority switchover; specify ΔV_trip and I_rev; watch stability with large cables.

MPS-friendly filter templates

Pulse MPS

RC corner ≥ ~3/τ_pulse; comparator window centered on pulse amplitude; sample rate ≥ 5× pulse rate.

DC MPS

Keep static load above minimum hold; low-pass only to reject EFT; avoid excessive averaging that hides drops.

Startup script — long cable + large Cin

  1. Precharge via limited Ilim to a safe threshold; monitor rail droop and temperature.
  2. Enable slope control (dV/dt) to full voltage; verify no PG chatter, no repeated retries.
  3. Confirm MPS visibility under EFT/EMI; log PG/FAULT/INT for post-test analysis.

Clamp Cascade Design (CM/DM Surge Paths)

Use a layered cascade so the common-mode (CM) energy is shed by GDT/TSS, the differential-mode (DM) residual is narrowed by a low-Rdyn TVS, and the low-cap ESD array near the RJ-45 preserves the eye and protects the PHY. Design with quantified limits: Rdyn, Vresidual(t,f) band, Ceq@1/100 MHz, Ileak, and surge shot count.

Key bounds & quick estimates

  • Allowed residual window: VPHY_safe < Vresidual(t,f) < VTVS,soft-knee
  • Low-C array budget: Ceq,sum ≤ Cbudget (array + traces + magnetics)
  • Cascade residual (rule-of-thumb): Vcm,port ≈ VGDT + Isurge·Rdyn,TVS
CM/DM surge cascade: GDT/TSS → low-Rdyn TVS → low-C ESD Two paths: CM energy to GDT/TSS then return to chassis; DM residual reduced by TVS; data eye protected by low-cap ESD. Waterline steps show energy reduction; labels mark V_GDT, R_dyn, C_eq and residual window. Common-Mode Path Differential-Mode Path RJ-45 Incoming CM energy Coupled CM After chassis return After GDT/TSS GDT/TSS V_GDT Return to chassis Initial DM stress After coupling TVS workload Residual window PHY-safe band Low-Rdyn TVS R_dyn Low-C ESD Array C_eq@100MHz V_cm,port ≈ V_GDT + I_surge · R_dyn,TVS Residual band vs frequency V_res(f)
Figure F4 — CM/DM surge cascade: GDT/TSS → low-Rdyn TVS → low-C ESD with residual-window design

Clamps Matrix — structure

Type
GDT/TSS / TVS / ESD-Array
Key Params
V_trigger/V_hold or V_RWM, R_dyn, C_eq@1/100 MHz, I_leak, P_pp, N_shots
Package
SMD series, pin symmetry, thermal
Placement
Distance to RJ-45, return path, relative to magnetics
Layout Don’ts
Long stubs, cross-domain returns, ESD before TVS, biasing detect/class
Notes
CM/DM fit, temperature drift, aging

MPS-Safe Filtering & Power Rules

Preserve the Maintain Power Signature (MPS) for both DC and pulse modes. Filters, ADC bandwidth, comparators, and averaging must not hide MPS. Power policing must align with PoE class budgets and be de-coupled from hiccup/averaging to avoid false under-power trips.

Key bounds & policies

  • Pulse MPS bandwidth: if pulse width is Tp, choose fc ≥ α / Tp (empirical α ≈ 3)
  • Policing consistency: Ilimit · Vport ≥ Pclass + ΔPmargin
  • De-couple hiccup and averaging; never let averaging hide pulse MPS edges
MPS-friendly filtering and comparator windows Top: MPS pulse vs RC output (compliant vs over-filtered). Middle: comparator window with hysteresis. Bottom: power policing plane showing I_limit·V_port vs P_class+ΔP. Pulse MPS visibility Compliant RC (f_c ≥ 3/T_p) Over-filtered (MPS lost) Comparator window & hysteresis V_th_hi V_th_lo Hysteresis prevents chatter Power policing consistency I_limit · V_port ≥ P_class + ΔP_margin (OK) Below budget → false under-power risk
Figure F5 — Filter/ADC bandwidth and comparator windows that preserve MPS while enabling power policing

RC/ADC quick reference (af / at / bt)

af
MPS: DC or slow pulse
fc ≳ 3/Tp (if pulse)
Sample ≥ 5× pulse rate
Comparator with small hysteresis (avoid chatter)
at
Pulsed MPS common
fc target mid-band; avoid heavy averaging
Hold-off for EFT bursts; log PG/FAULT edges
bt
Higher power → verify SOA with dV/dt
Ensure hiccup window decoupled from averaging
Maintain MPS visibility during startup ramps

“Metering ⟷ MPS non-interference” checklist

  1. Filters/ADC never reduce MPS visibility (DC or pulse).
  2. Detect/class path is not biased by metering leakage.
  3. fc and sample rate satisfy Tp bounds; set explicit hysteresis.
  4. Power policing averaging is de-coupled from hiccup logic.
  5. eFuse dV/dt does not mask pulse-MPS; verify during ramps.
  6. PG/FAULT semantics and logs are consistent and timestamped.
  7. MPS survives EFT/EMI; define minimum pulse-width qualifier.
  8. Long-cable + large Cin cases include MPS visibility tests.
  9. Record Vport, Ilimit, MPS_event_count, Fault_code.
  10. Production test includes MPS visibility, self-protection recovery, and false-trip avoidance.

eFuse/Hot-Swap Policy & SOA

Parameters & modes

Tune Ilim, Itrip, Timer, gate dV/dt, and verify against device SOA under the expected repetition rate. Choose fault policy: Hiccup, Foldback, or Latch. Define PG/FAULT semantics and debounce to avoid spurious resets.

Align with PoE class power budget

  • Ilim · Vport ≥ Pclass + ΔPmargin (allow for cable drop, startup inrush, temperature derating).
  • Coordinate Timer vs. inrush (Cin, cable length) so that PG does not chatter; add post-fault hold-off.
  • Use dV/dt to avoid PHY brown-out and preserve MPS visibility during ramps.

SOA verification at repetition rate

Validate the current pulse (I, ton) and its repetition (1/Trep) against the MOSFET/eFuse SOA surface. Use a simple thermal estimate (ΔT ≈ P · Rθ,eq) and ensure accumulated heating stays below limits across environmental corners.

Extreme startup: long cable / large Cin

  1. Precharge to a threshold with limited Ipre; monitor Vport droop and device temperature.
  2. Apply slope-controlled ramp (dV/dt) to full voltage; verify PG stability and no repeated retries.
  3. At low temperature (high ESR), extend Timer and set a bounded number of hiccup attempts.

PG/FAULT ↔ Power policing interlock

On fault, freeze metering window, log snapshot (Vport, Iport, Tj, codes), then apply policing rules. Separate the average window used by policing from the hiccup decision to avoid ping-pong cycling.

eFuse/Hot-Swap limit policy and SOA alignment I–t limit window, SOA surface with repetition trajectory, hiccup vs foldback traces, and PG/FAULT timing micro-window. I–t limit window I t Allowed region (I_lim, Timer) I_trip SOA surface (pulse & repetition) I t_on SOA boundary Pulse @ 1/T_rep Hiccup vs Foldback Hiccup Foldback PG/FAULT timing PG (debounced) FAULT detect Policing window Hold-off
Figure F6 — Gate slew / soft-start, current-limit & SOA policies aligned with PoE budget and long-cable / large Cin.

Strategy matrix (load / cable / thermal → dV/dt, Ilim, Timer)

Short cable + small Cin
dV/dt: medium; Ilim: Pclass/Vport + small margin; Timer: short; Mode: foldback.
Long cable + large Cin
dV/dt: slow; Ilim: higher with precharge; Timer: extended; Mode: hiccup with bounded retries.
High ambient / tight SOA
dV/dt: gentle; Ilim: derated; Timer: thermal-aware; Mode: foldback + telemetry latch.

PG/FAULT mapping template

Code
PG_OK / UVLO / OCP / OTP / Surge_trip
Source
eFuse / TVS / Meter / ADC comparator
Snapshot
Vport, Iport, Tj, MPS_state, counters
Action
Hold-off / Retry / Latch & Log / Notify host

Metering Hooks & Placement

Placement overview

PSE: meter before or after eFuse; PD: before/after bridge or ideal diode. Do not bias detect/class/MPS paths; control Ileak.

Shunt vs magnetic sensing

Shunt
High accuracy/bandwidth; power loss = I²·Rshunt; needs Kelvin sense & low-drift amplifier.
Magnetic
Low loss & isolation; medium-high bandwidth; handle offset drift and external magnetic fields.

Bandwidth & algorithms

  • Pulsed MPS: if pulse width is Tp, choose fc ≥ 3/Tp; sample ≥ 5× pulse frequency.
  • Use sliding average for power, peak detector for OCP; add EFT suppression and a minimum pulse-width qualifier.
  • Log Vport, Iport, Tj, event counts with timestamps for traceability.

Power & thermal trade-offs

Estimate shunt dissipation P = Irms² · Rshunt and local temperature rise ΔT ≈ P · Rθ,local. Magnetic sensors reduce loss but require offset/temperature compensation and keep-out from magnetics.

Meter placement: shunt vs magnetic, bandwidth & power Top: two placement schemes (pre/post eFuse or bridge). Middle: shunt power vs current with isotherms. Bottom: MPS pulse with filter/comparator windows (compliant vs not). Placement schemes RJ-45 / Magnetics eFuse/HS Meter Load A: Meter after eFuse RJ-45 / Magnetics Meter eFuse/HS Load B: Meter before eFuse Shunt power vs current (isotherms) P I_rms R_shunt ↑ → P = I²R ΔT limit MPS pulse vs filter & comparator windows Compliant (f_c ≥ 3/T_p) Over-filtered (lost MPS) V_th_hi V_th_lo Hysteresis window
Figure F7 — Shunt/magnetic sensor placement, bandwidth rules, and power/thermal trade-offs with MPS-safe windows.

Metering parameter card

Rshunt
mΩ range; Kelvin routing; tolerance & TCR
Bandwidth
kHz target; fc ≥ 3/Tp (pulse MPS)
Noise
µVrms/√Hz; amp input bias & offset
ADC rate
ksps; ≥ 5× pulse rate; synchronized logging
Ileak limit
No bias to detect/class/MPS paths

Shunt power estimate (quick)

Irms=0.2 A
P ≈ 0.2²·Rshunt
Irms=0.6 A
P ≈ 0.6²·Rshunt
Irms=1.0 A
P ≈ 1.0²·Rshunt
ΔT
≈ P · Rθ,local (layout dependent)

PCB Layout & Grounding

Shortest discharge paths & small loops

Place the low-C ESD array adjacent to RJ-45; return to ground before any routing fan-out. Keep the loop area from RJ-45 → ESD → return via as small as possible and avoid plane breaks under differential pairs near the connector.

Shield to chassis strategies

Direct
Best CM discharge; risk of LF ground loop.
Series R
Moderates LF loop; limited CM surge current.
Series L
Filters HF noise, preserves surge path; size L for peak current.
RC
HF tie with DC isolation; good for ESD/EFT, check power-freq leakage.

Separate energy domain from signal domain

Form a clear clamp/chassis domain for GDT/TSS/TVS returns; keep PHY/MCU on a signal domain. Cross-domain currents must pass through controlled components or via fences—never through random copper.

Cross-pair coupling & differential residual control

  • Local reference “mini-shelves” under pairs near the connector to stabilize return.
  • Keep ESD array within a few millimeters of RJ-45 pins; use paired vias when layer changes are unavoidable.
  • Bound parallelism between pairs; use via fences to break capacitive coupling.

Creepage/clearance & via/loop geometry

Respect target level creepage/clearance in the RJ-45 zone; use two ground vias right off the ESD ground pins; prefer short-wide copper to ground over thin traces; avoid U-shaped returns.

PoE layout & grounding overview Shortest discharge paths, shield-to-chassis options, compliant vs anti-patterns, and distance labels (mm). Compliant (✓) RJ-45 ESD GND vias ×2 Magnetics TVS Chassis domain ≤ few mm Anti-patterns (✗) RJ-45 ESD Long loop TVS Falls into signal GND Shield ↔ Chassis options Direct Max CM discharge; watch LF loop. Series R Tames LF loop; lower surge current. Series L HF filtering with surge path. RC HF tie + DC isolation.
Figure F8 — Shortest discharge paths, shield-to-chassis strategy, compliant vs anti-patterns, and distance cues.

Layout hard rules (15-point checklist)

  1. Place ESD array within a few millimeters of RJ-45; minimize stubs.
  2. ESD grounds via immediately (prefer dual vias under pins).
  3. TVS returns into chassis/energy domain—never into signal ground.
  4. RJ-45 → ESD path has no forks; paired vias when layer change is required.
  5. Keep pair symmetry (length/coupling) around the ESD location.
  6. Do not leave shield floating; choose one of Direct/R/L/RC.
  7. Maintain cascade order: ESD (RJ-45 side) → Magnetics → TVS.
  8. Isolate energy domain from signal domain with uninterrupted ground fences.
  9. Limit pair-to-pair parallelism; via fences break capacitive coupling.
  10. Use ground via walls near dense routing to block coupling.
  11. Meet creepage/clearance targets with margin in the port zone.
  12. Use short-wide copper from protector ground pins; avoid thin serpentine lines.
  13. Prefer “ground first, then route” for return paths.
  14. Avoid U-shaped or large return loops in the port area.
  15. Perform a manual loop-area review in addition to DRC.

Validation Matrix & Scripts

Overview & level planning

Build a port-level plan covering ESD, EFT, Surge (CM/DM, L-G/L-L), cross-pair injection, MPS integrity, and thermal/SOA@repetition. Step levels from low to high; switch modes methodically.

Unified acceptance criteria

  • Link alive (or auto-recovers within allowed window; no abnormal logs).
  • MPS preserved (DC or pulsed signature clearly visible).
  • PG/FAULT semantics correct (codes, timing, debounce, hysteresis).

Residual measurement & logging

Use sufficient probe bandwidth; keep ground leads short. Trigger at surge leading edge; capture rise-decay-settle. Log Vpeak, V10–90%, tsettle, event count, MPS state, and PG/FAULT codes.

PoE validation flow Step-by-step test matrix for PoE surge/ESD/EFT, cross-pair injection, and MPS integrity checks with failure feedback. ESD (port/shield) EFT (direct/coupled) Surge (CM/DM, L-G/L-L) Cross-pair injection MPS integrity Thermal / SOA@rep Acceptance ✔ Link alive ✔ MPS preserved ✔ PG/FAULT semantics Log: V_peak, V_10–90%, t_settle, events, MPS, codes Fail → Diagnose → Revise → Re-test Residual too high Change ESD/TVS or routing Subset re-test MPS lost Adjust RC/ADC, hysteresis, window Subset re-test
Figure F9 — Stepwise PoE validation with acceptance criteria and failure feedback loops.

Test matrix header (copy & fill)

TestCaseID
Phenomenon
Mode
Level/Steps
Port/Pair
Equipment & Probe
Setup Params
Expected
Pass/Fail
Logged Fields
Notes/Actions
TC-001
ESD
Port / Shield
±2→±8 kV
P1/P2
Gun + short ground
Rep-rate, dwell
No link drop
Link/MPS/PG OK
V_peak, t_settle, codes

Residual logging (quick table)

Port
Pair
Mode
Level
V_peak (V)
V_10–90% (V)
t_settle (µs)
Events
MPS
PG/FAULT
Comments
Port A
P1
CM L-G
1 kV→4 kV
0
OK
OK

Seven-Brand IC Shortlist

Scope: PoE port protection and power-path only. Buck/LLC and downstream converters are intentionally excluded to avoid overlap with sibling pages. Each card explains why the part fits PoE (Detect/Class/MPS safety), followed by concise watch-outs (Ceq, Ileak, Rdyn, PG/FAULT semantics).

Buckets:
Protectors — GDT/TSS, low-Rdyn TVS, low-C ESD arrays
Power Path — eFuse / Hot-Swap, ideal diode / bridge
Metering — shunt AFE / PMBus / magnetic sensing
PoE Control — PSE / PD controllers (port-side only)

Texas Instruments (TI)

PoE Control (PD): TPS2373
High-power PD interface; Class/MPS friendly. Coordinate soft-start with downstream and ensure detection window leakage is within spec.
Watch-outs: MPS pulse visibility; PG/FAULT order on start.
PoE Control (PSE): TPS23882
Multi-port PSE manager enabling per-port power policing consistent with eFuse limits.
Watch-outs: Per-port budget consistency; surge domain isolation.
Power Path (eFuse): TPS2663
48-V eFuse with programmable Ilim/timer/soft-start; handles long-cable + large Cin bring-up.
Watch-outs: Validate SOA @ repetition; hiccup vs foldback choice.
Power Path (Ideal Diode): LM74800-Q1
Reverse current blocking and low drop; set priority path ΔV precisely.
Watch-outs: Sense accuracy vs surge stress; gate slew.
Protectors (Low-C ESD): TPD4E05U06
Ultra-low C for Ethernet pairs; preserves eye while clipping residuals.
Watch-outs: Ceq budget at 100 MHz; placement within a few mm of RJ-45.
Metering: INA226 / INA238
High-side current + bus voltage; tuning of averaging window to remain MPS-safe.
Watch-outs: Shunt loss vs bandwidth; de-couple from eFuse hiccup timing.

STMicroelectronics (ST)

PoE Control (PD): PM8805
802.3bt PD with active bridge & hot-swap MOSFET; robust start-up for large Cin.
Watch-outs: Verify MPS window during soft-start; thermal headroom.
PD Companion: PM8804
Works with PM8805 to implement controlled power stage.
Watch-outs: PG/FAULT mapping to system controller.
Power Path (eFuse): STEF12
Adjustable current limiting and controlled ramp; suitable as port or sub-rail protector (check V rating).
Watch-outs: Port 57 V margin; hiccup timing vs policing.
Protectors (Low-C ESD): ESDAX/ESDA 系列
Low-cap Ethernet-grade arrays; select by Ceq/channels/package & placement.
Watch-outs: Route first to ground then out; keep loops tiny.

NXP

PoE Control (PD, legacy/af): MC34670
Compact PD interface for lower-power PDs; good for legacy/compatible designs (re-validate MPS).
Watch-outs: Align class & detect leakage windows.
Protectors (Low-C ESD): PESD2ETH-D / -AX / PESD2ETH100-T
Ultra-low capacitance arrays tailored for Ethernet pairs and automotive Ethernet.
Watch-outs: Ceq at 100 MHz; very close to RJ-45.

Renesas

Metering: ISL28023
Precision voltage/current/power monitor for port policing with stable averaging; I²C control.
Watch-outs: Average window vs MPS pulse; sense resistor drift.
Power Path: Hot-Swap / OR-ing families
Use IntelliTrip/programmable fault timers for surge-rich environments.
Watch-outs: SOA repetition; gate slew vs inrush profile.

onsemi

PoE Control (PD): NCP1090 / 1091 / 1095 / 1096
PD interface portfolio from af to bt; rugged front-end for line transients (re-test MPS integrity).
Watch-outs: Class current windows; start-up with long cables.
Protectors (Low-C ESD/TVS): ESD9M / ESD9B
Very small packages for tight placement near RJ-45; choose by Ceq & residual window.
Watch-outs: Solder-induced parasitics; pair symmetry.

Microchip

PSE Control: PD69200 / PD69208M / PD69210 / PD69220
Multi-port PSE controllers with integrated management for power budgeting & policing.
Watch-outs: Port sequencing vs eFuse timing.
PD Front-End: PD70224 / PD70288 (IdealBridge)
Active rectification lowers drop/heat; re-verify PG/FAULT and inrush consistency.
Watch-outs: Ideal-bridge ΔV & reverse current windows.

Melexis

Metering (Magnetic): MLX91208
Programmable Hall current sensing with low insertion loss—ideal when shunt heat is a concern.
Watch-outs: Bandwidth vs MPS pulse; offset drift calibration.

Cross-Brand Alternatives & Migration

Goal: swap across brands without breaking Detect/Class/MPS or port power budget. Validate with full IEC-4-2/-4/-5 + cross-pair scripts after any change of protector, eFuse/HS, ideal-bridge, or metering.

Low-C ESD Array Migration

Match by Ceq@100 MHz and residual bandwidth rather than nominal standoff voltage. Typical A→B paths: Nexperia PESD2ETH-D/-AX/-100-T ↔ TI TPD4Exx ↔ onsemi ESD9M/ESD9B. Re-verify eye/GbE return loss and preserve MPS (DC & pulsed) visibility.

eFuse / Hot-Swap / Ideal-Diode Migration

First validate SOA @ repetition with surge scripts; then align Ilim/Timer/dVdt and hiccup vs foldback policy. Sequence: ideal bridge priority path ΔV → eFuse power window → metering average. Example: TI TPS2663 ↔ ST STEF12 ↔ Renesas Hotswap families.

PSE/PD & Ideal-Bridge Migration

Keep Detect/Class windows and MPS strategy (DC vs pulsed) consistent. Moving from passive to active bridge requires re-mapping PG/FAULT and re-tuning inrush. Example: TI TPS2373 ↔ ST PM8805 ↔ onsemi NCP109x ↔ Microchip PD70224/PD70288.

Metering (Shunt ↔ Magnetic) Migration

Size bandwidth with fc ≥ 3/Tp where Tp is MPS pulse width; separate peak-hold from average window. Example: Renesas ISL28023 ↔ Melexis MLX91208. Re-scale ADC rate and repeat MPS integrity scripts.

Cross-brand migration map for PoE port components A and B brand paths for low-C ESD, eFuse/Hot-Swap, metering, and PD/PSE controllers, with must-test checkpoints. Low-C ESD Arrays Match by C_eq@100MHz & residual bandwidth A: PESD2ETH-D/-AX/-100-T → B: TPD4Exx / ESD9M Checkpoints: eye/return-loss, MPS DC & pulsed eFuse / Hot-Swap Validate SOA@repetition then align Ilim/Timer/dVdt A: TPS2663 → B: STEF12 → C: Renesas HS Checkpoints: inrush profile, policing thresholds Metering (Shunt ↔ Magnetic) f_c ≥ 3/T_p ; separate peak vs average windows A: ISL28023 ↔ B: MLX91208 Checkpoints: ADC rate, MPS integrity script PSE/PD & Ideal-Bridge Keep Detect/Class/MPS consistent across brands TPS2373 ↔ PM8805 ↔ NCP109x ↔ PD70224/288 Checkpoints: PG/FAULT mapping; inrush re-tune Must-Test After Any Migration IEC-61000-4-2 / -4 / -5 (CM & DM, L-G / L-L) Cross-pair injection with long-cable emulation MPS integrity (DC & pulsed) not swallowed PG/FAULT semantics + hysteresis & debounce Thermal imaging and SOA @ repetition Residual logging: V_peak, V_10–90%, t_settle Full regression after protector/bridge change
Figure F10 — Cross-brand migration map with A→A / A→B routes and must-test checkpoints.

Migration checklist (10 hard checks)

  1. Ceq@100 MHz within budget; pair symmetry preserved.
  2. Ileak within detect/classification windows.
  3. Residual bandwidth not compressing PHY-safe range.
  4. SOA @ repetition verified (IEC-4-5 stepped levels).
  5. Ilim/Timer/dVdt aligned to port budget & cable/Cin.
  6. PG/FAULT semantics and interlocks do not conflict.
  7. MPS integrity in both DC and pulsed modes.
  8. Cross-pair injection does not cause link loss.
  9. Thermal headroom validated (Tj estimate / IR frames).
  10. 1-for-1 regression when protector/bridge is replaced.

BOM remarks (paste-ready)

  • Data-side ESD arrays shall be selected by Ceq@100 MHz and residual bandwidth, not nominal voltage. PESD2ETH / TPD4E / ESD9 families may substitute only if MPS integrity is re-verified.
  • Port eFuse/HS shall pass SOA @ repetition; align Ilim/Timer/dVdt with port budget and long-cable + large-Cin start-up scripts.
  • Any PD/PSE/ideal-bridge change requires full IEC-4-2/-4/-5 + cross-pair regression and PG/FAULT semantics mapping review.

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FAQ

Only PoE port scope: protectors, eFuse/Hot-Swap, metering, PSE/PD behavior. Each answer keeps Detect/Class/MPS intact and is written for direct engineering use. The text below is exactly mirrored in the JSON-LD.

How do I add surge clamps without breaking IEEE detection/classification on a PD?

Use a cascade: GDT/TSS for energy shedding, then low-Rdyn TVS to reduce residuals, and a low-capacitance ESD array at the data pairs. Keep Ileak inside the detect window and keep Ceq@100 MHz within budget so MPS is not swallowed. Route to ground first, then outward, and re-verify classification with the full port regression suite.

Where should I place the ESD array—RJ-45 side or PHY side—to minimize residuals?

Prefer the RJ-45 side for the shortest discharge loop and symmetric placement per differential pair. Use PHY-side parts only for secondary clamping or internal coupling fixes. Size by Ceq@100 MHz and maintain pair symmetry and length matching. Confirm with eye/return-loss measurements and check that MPS remains visible in both DC and pulsed modes.

What’s the safest way to handle cross-pair lightning events on 4-pair PoE?

Drive common-mode energy into GDT/TSS first, then let low-Rdyn TVS and low-cap ESD handle the remaining differential-mode residuals. Tie shield to chassis at a single point to avoid raising the signal reference. Validate with cross-pair injection using long-cable emulation, confirming link stability, residual limits at the PHY, and the preservation of MPS signatures.

How do eFuse/Hot-Swap current limits interact with PoE power policing?

Define the system power window with PSE or port policing first, then set eFuse Ilim, timer, and dV/dt so Ilim·Vport ≥ Pclass plus margin. Verify SOA at expected repetition, and interlock PG/FAULT with the policing logic to prevent ping-pong. Establish ideal-bridge priority delta-V before finalizing the eFuse window and averaging strategy.

Can a single low-C TVS protect both data and power paths on a PoE port?

Generally no. Data pairs require ultra-low Ceq and controlled residual bandwidth to protect signal integrity and MPS visibility, while the power path needs higher energy handling and broader clamping. Keep roles separate: data-side low-cap ESD arrays plus low-Rdyn TVS for DM residuals, and higher-energy surge parts on the port power rails or ideal-bridge input.

How do I keep MPS intact when I add RC filters for metering?

Choose bandwidth with fc ≥ 3/Tp, where Tp is the MPS pulse width. Separate peak-hold from the averaging window so pulses remain visible while noise is reduced. Place the metering point so it does not bias detect/class channels. Validate both DC and pulsed MPS modes and confirm no false policing events during dynamic loading.

Should the shield go straight to chassis ground or through a component?

Default to a single-point direct tie to chassis to dump common-mode energy quickly. Where front-end sensitivity demands, you can insert an RC, a small inductor, or a resistor, but you must re-measure surge residuals and EMI. Never route large surge currents into signal ground, and keep the return path short and well defined.

What metering bandwidth is “enough” for power budgeting but safe for MPS?

Start with fc ≥ 3/Tp to preserve MPS edges while capturing load dynamics. Add hysteresis and debounce around policing thresholds to avoid chatter. Do not over-widen bandwidth or EFT bursts may trigger false events. Characterize with step loads, confirm pulse detect statistics, and log average versus peak to tune the final measurement windows.

How do I verify that classification is not biased by my protection network?

Measure classification with the full protection stack installed, logging Ileak, equivalent resistance, and Ceq. Then repeat across temperature and replacement candidates. Passing parametrics alone is insufficient; run a complete port regression: IEC-61000-4-2/-4/-5, cross-pair injection, MPS integrity, and link stability under long cables. Record residual waveforms and decision boundaries for traceability.

What’s the right order for GDT/TSS and TVS to reduce residual voltage?

Place GDT/TSS first to shed the bulk of the surge energy, then a low-Rdyn TVS to narrow the residual band, and finally a low-cap ESD array at the data pairs. Keep devices very close to the RJ-45 or magnetics, minimize loop area, and confirm the step-down of residuals with time-aligned port measurements.

How do I stop repeated hiccup trips under long cable or capacitive loads?

Increase soft-start time and control gate slew so the inrush profile fits the port budget. Align Ilim and timer with the power class and consider pre-charge for very large Cin. Add debounce and hysteresis around PG/FAULT. Validate with worst-case cold start, long cable emulation, and thermal monitoring during repeated attempts.

What are common routing mistakes that inflate surge residuals at the PHY?

Locating protectors far from the RJ-45, creating large loops, breaking pair symmetry, routing first then returning to ground, and using discontinuous return paths all raise residuals. Always connect to ground first, minimize loop area, preserve symmetry and length matching, and keep discharge paths short. Verify with residual measurements and eye diagrams.