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Introduction & Scope

For nA–µA Iq LDOs in battery/harvesting nodes, the goal is long keep-alive with predictable wake-up. Engineers should quantify Iq, wake energy, reverse leakage, and tiny-MLCC stability together—never Iq alone.

Ultralow-IQ Scope — few key levers Use cases BLE beacon RTC / always-on MCU Energy harvesting Data logger Safety / hold-up Budgeting Iavg = Iq + Iactive × duty + E_wake / Period Life ≈ C_batt × V_range / Iavg Count wake pulses (cold start / pre-bias) Pitfalls Iq ≠ “no-load current” Wake energy not included Sleep vs shutdown mixed Reverse backfeed ignored Tiny-Cout stability unchecked
Scope & decision levers for nanopower LDOs; don’t confuse Iq with no-load current, and don’t ignore wake energy.

Physics of Iq

Iq stems from the reference, error-amplifier bias, gate-drive/charge-pump chain, pass FET leakage, and the external divider. Dynamic-biasing reduces average Iq, yet wake-up time rises when the reference and BYP nodes must re-settle.

Reference duty-biased / sleep Error Amp dynamic bias Gate drive charge pump Pass FET leakage path Reverse-current block (RCB) Divider leak R_top ∥ R_bot Wake-up budget t_ref + t_EA + t_BYP + t_SS Tiny-MLCC stability check Cout & ESR window
Iq = reference + EA bias + gate-drive/pump + pass FET leakage + divider; wake-up = t_ref + t_EA + BYP + soft-start.

Key Trade-offs

Three core balances for nanopower LDOs. Each panel uses few words and an annotated visual so engineers see the decision lever quickly.

Nanopower LDO — Key Trade-offs Iq ↔ Wake-up Iq Wake-up time Higher Iq → faster wake Cold vs pre-bias differ Iq ↔ PSRR / Noise Low Iq ⇒ lower BW BYP/FF improves PSRR/Noise but adds BYP charge time Iq ↔ Stability (Cout/ESR) Valid window Cout min & ESR range Tiny-MLCC only → risk Lower Iq ⇒ lower loop gain Check min load requirement
Trade-offs: Iq vs wake-up time; Iq vs PSRR/Noise (BYP/FF helps but costs charge time); Iq vs stability window when using tiny MLCCs.

Design Rules (Copy-ready)

Keep rules short, measurable, and directly verifiable on the bench.

Battery Life Iavg = Iq + Iactive × duty + (E_wake/Period)/Vout Life ≈ C_batt × V_range / Iavg Measure Iq (typ/max) + wake energy pulses Risk: ignoring E_wake or divider leak Wake-up t_wake = t_ref + t_EA + t_SS (+ t_BYP) Colder temp / small Cout / bigger step ⇒ slower Scope EN, Vout, and load step (cold & pre-bias) Risk: trust datasheet single-point only Dropout / Cold-start V_drop = f(I_load, pass FET, temperature) Near dropout ⇒ margin & speed degrade Sweep VIN down; log Vout error + t_wake Risk: wiring loss / cell IR ignored Leakage / Reverse Check reverse current when Vout > Vin Divider leak adds to Iavg (R_top/R_bot) Prefer LDOs with RCB or add ideal-diode Risk: “shutdown Iq≈0” ≠ “no backfeed”
Copy-ready rules: compute Iavg with wake energy, decompose t_wake, characterize dropout at low VIN, and verify reverse paths plus divider leakage.

Mini Selection Pointers (fields)

Iq (typ/max) Shutdown Iq t_wake (cold / pre-bias) RCB (reverse block) Cout_min ESR range Min load Dropout @ I PSRR targets Noise (µV_rms)

Stability @ Tiny Cout (1–4.7 µF MLCC)

With very small MLCC and very low ESR, loop gain and phase margin become sensitive. Use the valid window for Cout and ESR, and apply BYP or small feed-forward (FF) caps to increase mid-band phase. Note that BYP charging increases wake-up time.

Tiny-MLCC Stability Window Valid window Cout ≥ 1–4.7 µF (typ) ESR in range (min to max) Min load may be required Notes • Low ESR pushes ESR zero to higher freq • Very low Iq → lower loop gain • Pre-bias start needs dedicated check BYP / FF impact BYP/FF on (solid): better margin BYP/FF off (dashed): poorer margin BYP charge increases wake time Use smallest effective BYP / FF
Keep Cout and ESR inside the valid window; add BYP or a tiny FF cap to boost phase margin. Verify cold start and pre-bias cases.
Load Step — with vs without FF time Vout Solid: FF on → better damping Dashed: FF off → ringing risk Check overshoot / undershoot
A tiny FF improves damping; verify overshoot/undershoot and repeat at low temperature and with different Cout values.

Bench checklist

  • Step load: 0 → I_min → I_step; log ringing and damping.
  • A/B: BYP on/off, FF value sweep; note wake time changes.
  • Cout/ESR sweep: 1 → 2.2 → 4.7 µF; add small ESR vs pure MLCC.
  • Pre-bias and cold start at the lowest temperature target.

Application Scenarios

Six tiles. Each shows target Iq / wake and the must-check stability or reverse-current note. Keep words minimal and actionable.

BLE Beacon (coin cell) Iq ≤ 0.5 µA t_wake < 1–2 ms RCB = yes; Cout ≥ 1–2.2 µF Check: E_wake + low-temp ESR Harvesting + Supercap Iq ≤ 1–2 µA Cold start capable RCB = yes; Cout ≥ 2.2–4.7 µF Check: slow ramp + backfeed RTC / Keep-alive Iq ≤ 0.3–0.8 µA Low ripple; Cout ≥ 1–2.2 µF Min load? verify Check: divider leakage Always-On MCU Iq ≤ 1–2 µA t_wake < 1–3 ms RCB = yes; Cout ≥ 2.2–4.7 µF Check: cold vs pre-bias Wireless Sensor Node Iq ≤ 1 µA RF load bursts Cout ≥ 2.2–4.7 µF; PSRR fit Check: TX ripple window Data Logger Iq ≤ 0.5–1 µA Long sleep + short write RCB = yes; Cout ≥ 1–2.2 µF Check: write undershoot
Scenario tiles with minimal text: show target Iq/wake and the stability or reverse-current checks that most often break energy budgets.

Validation Playbook

Test once, repeat everywhere: cover light-load, wake-up, and temperature with VIN corners; include pre-bias, reverse current, and event + energy logs.

Validation Matrix Dims: Temp × VIN (min / nom / max) VIN_min VIN_nom VIN_max T_low T_room T_high Iq: 0.45 µA t_wake: 2.4 ms Stability: ✅ BYP: ON Iq: 0.40 µA t_wake: 1.8 ms Stability: ✅ FF: 47 pF Iq: 0.42 µA t_wake: 1.6 ms Stability: ✅ BYP: OFF Iq: 0.50 µA t_wake: 2.0 ms Stability: ✅ BYP: ON Iq: 0.48 µA t_wake: 1.7 ms Stability: ✅ FF: 47 pF Iq: 0.46 µA t_wake: 1.5 ms Stability: ✅ BYP: OFF Iq: 0.55 µA t_wake: 2.1 ms Stability: ⚠︎ retune BYP: ON Iq: 0.52 µA t_wake: 1.8 ms Stability: ✅ FF: 47 pF Iq: 0.50 µA t_wake: 1.6 ms Stability: ✅ BYP: OFF Include cold-start & pre-bias in every cell Log: Iq, t_ref/t_EA/t_BYP/t_SS, OS/US, stability flag
Matrix view helps spot weak corners. Repeat with BYP/FF ON/OFF and sweep Cout/ESR.
t_wake decomposition & reverse current t_wake = t_ref + t_EA + t_BYP + t_SS t_ref t_EA t_BYP t_SS BYP adds charge time → longer wake Reverse current (Vout > Vin) Measure I(Vin) or shunt voltage Test EN=Low and power-fail cases RCB = yes → I_rev ≈ 0 Logging fields (event + energy) Event: timestamp, Temp/VIN/config, EN, t_ref/t_EA/t_BYP/t_SS, OS/US, stability flag Energy: E_wake = ∫(I_in·VIN)dt; I_avg back-calc; I_rev peaks & duration Files: CSV per temperature/board/config; consistent naming Artifacts: scope screenshots, SMU logs, harness photo
Decompose t_wake for root cause; measure reverse current during Vout>Vin; keep reproducible event and energy logs.

Bench checklist

  • Matrix: Temp {low/room/high} × VIN {min/nom/max} × BYP/FF {on/off}.
  • Load steps: 0 → I_min → I_step; log OS/US, damping, and restarts.
  • Wake-up: scope EN/Vout/load; split t_ref / t_EA / t_BYP / t_SS.
  • Reverse: Vout>Vin with EN low; measure I(Vin) (RCB expected ≈ 0).
  • Logs: per-temp CSV; include E_wake and I_avg back-calculation.

Layout Checklist

Keep analog nodes quiet and short. Star AGND/PGND, place Cout/BYP/FB tight, and leave jumpers for BYP/FF and minimum load.

Layout — Do / Don’t Do LDO Cin Cout BYP FB R_top/R_bot Star AGND/PGND near LDO GND Short loops; many vias by caps BYP/FF close to reference/FB Don’t LDO Long FB trace across split BYP far Cap loops stretched, few vias AGND/PGND mixed randomly
Keep sensitive nodes tight and grounded at a star point; avoid long feedback across plane splits or a far BYP loop.
Leakage & Pre-bias Paths Divider leakage R_top / R_bot add to Iavg Option: high-R + small cap Reverse backfeed Vout > Vin → check I_rev Prefer RCB or add ideal diode Pre-bias pad Inject Vout_pre ≈ 0.7×Vout_nom Verify glitch-free start Jumpers & test switches BYP on/off · FF value · Min load EN/Vout/Vin/Iin measurement pads
Plan divider values to fit the Iq budget, block reverse current, and provide pads for pre-bias injection and A/B tuning.

Layout checklist

  • Star AGND/PGND at LDO GND; short return loops; multiple vias by Cin/Cout.
  • FB divider close to LDO/Cout; short, straight, away from high dv/dt zones.
  • BYP shortest path; note that BYP increases wake time.
  • FF cap across R_top; keep pads to tune value; consider minimum load path.
  • RCB preferred; otherwise plan ideal-diode path; measure I_rev in Vout>Vin.
  • Provide jumpers: BYP on/off, FF value, min load; labeled measurement pads.
  • If auto-discharge exists, make sure the discharge path does not create leakage.

Mini IC-Selection Pointers (Seven Brands)

Quick, comparable cards for ultralow-IQ / nanopower LDO shortlisting. Fill any “—” fields after datasheet checks. Keep one family per card and add variants as needed.

Texas Instruments LDO

TPS7A02

  • Iq (typ/max): 25 nA / —
  • Iout_max: 200 mA
  • Vin_range: —
  • Vout_range: —
  • Dropout@I: —
  • Cout_min / ESR: — / —
  • RCB / Auto-Discharge: — / —
  • Temp / AEC-Q100: — / —
  • Pkg: —
  • Notes: nano-IQ always-on rails, coin-cell/harvesting
Cross/Alternatives: NCP170 · MCP1711 · STLQ015
STMicroelectronics LDO

STLQ015

  • Iq (typ/max): 1.4 µA / —
  • Iout_max: 150 mA
  • Vin_range: 1.5–5.5 V
  • Vout_range: —
  • Dropout@I: —
  • Cout_min / ESR: — / —
  • RCB / Auto-Discharge: — / —
  • Temp / AEC-Q100: — / —
  • Pkg: —
  • Notes: low-IQ with 150 mA headroom
Cross/Alternatives: NCP170 · MCP1711 · TPS7A02
onsemi LDO

NCP170

  • Iq (typ/max): 500 nA / —
  • Iout_max: 150 mA
  • Vin_range: —
  • Vout_range: —
  • Dropout@I: —
  • Cout_min / ESR: — / —
  • RCB / Auto-Discharge: — / —
  • Temp / AEC-Q100: — / —
  • Pkg: —
  • Notes: ultralow-IQ with dynamic transient options
Cross/Alternatives: TPS7A02 · MCP1711 · STLQ015
Microchip LDO

MCP1711

  • Iq (typ/max): 600 nA / —
  • Iout_max: 150 mA
  • Vin_range: 1.4–6.0 V
  • Vout_range: —
  • Dropout@I: —
  • Cout_min / ESR: — / —
  • RCB / Auto-Discharge: — / —
  • Temp / AEC-Q100: — / —
  • Pkg: —
  • Notes: robust VIN max; common SOT/DFN variants
Cross/Alternatives: TPS7A02 · NCP170 · STLQ015
Renesas LDO (low-noise)

ISL9021A

  • Iq (typ/max): ~35 µA / —
  • Iout_max: 250 mA
  • Vin_range: —
  • Vout_range: —
  • Dropout@I: —
  • Cout_min / ESR: — / —
  • RCB / Auto-Discharge: — / —
  • Temp / AEC-Q100: — / —
  • Pkg: —
  • Notes: low-noise/PSRR option when IQ budget allows
Cross/Alternatives: Low-noise variants in TI/ST families
NXP PMIC (AON LDOs)

PCA9460

  • AON LDO count: multiple (family-dependent)
  • Per-LDO Iout: —
  • Iq per LDO: —
  • Vin_domain: —
  • Vout options: —
  • RCB / Sequencing: — / supported (PMIC)
  • Temp / AEC-Q100: — / —
  • Pkg: —
  • Notes: for multi-rail wearables/IoT with always-on domains
Cross/Alternatives: TI TPS65xxx PMICs · Renesas ISL/RAA PMICs
Melexis LIN + LDO

MLX8005x / MLX8003x

  • LDO Vout/Iout: 5 V / up to ~70 mA (variant-dependent)
  • Iq (AON): —
  • VIN (LIN node): —
  • RCB: —
  • Temp / AEC-Q100: — / —
  • Pkg: —
  • Notes: automotive LIN slaves with integrated AON LDO + reset/WDT
Cross/Alternatives: NXP TJA family (LIN+LDO) · onsemi NCV LIN

Family Extensions & Variant Placeholders

Add per-family variants (fixed Vout, packages) here without mixing other families. Keep fields identical for copy/paste.

TPS7A02-xx (Vout fixed) — add specs…
STLQ015-xx — add specs…
NCP170-xx — add specs…
MCP1711-xx — add specs…

Cross-Mapping Rules (fill later)

  • Match fixed Vout first; keep package pinout compatible.
  • Step IQ ladder: nano-A (TPS7A02) → sub-µA (NCP170/MCP1711) → ~µA (STLQ015) → low-noise/PSRR (ISL9021A).
  • Respect RCB, Auto-Discharge, Cout/ESR window, t_wake, and temp/automotive constraints.

Frequently Asked Questions

How low should Iq be for coin-cell BLE beacons?

Aim for sub-µA quiescent current, ideally 25–600 nA depending on duty cycle and advertisement interval. Validate average current as Iavg = Iq + Iactive·duty, and include wake energy per event. Check wake time under cold, small Cout values, and RF burst coupling. Confirm stable startup with pre-bias cases.

Why does my “Iq” look higher on the bench than in the datasheet?

Divider leakage, meter burden, and temperature drift inflate readings. Disconnect or account for FB resistors, measure with a high-accuracy DMM or SMU at VIN min/nom/max, and soak at low and high temperature. Ensure EN state and any pull-ups are known. Log Iq_off separately from normal Iq.

How do I split wake-up time into t_ref, t_EA, t_BYP, and t_SS?

Probe EN, Vout, and load simultaneously. t_ref is bandgap/reference start, t_EA is error-amp settling, t_BYP is bypass-cap charging, and t_SS is soft-start ramp. Repeat with BYP on/off and different FF values. Record each segment across VIN and temperature corners for budget and regression.

What Cout/ESR window keeps a nanopower LDO stable?

Start with 1–4.7 µF MLCC and the vendor’s ESR range. Very low ESR shifts the ESR zero upward and reduces damping. Sweep Cout and add small series ESR if needed. A tiny feed-forward cap often improves phase margin, but verify overshoot and ringing under load steps and cold conditions.

Does a BYP pin reduce noise at the cost of wake-up time?

Yes. Bypass capacitors usually lower reference noise and improve PSRR but add a charging delay. Quantify the trade-off by measuring noise or PSRR vs wake-up segments with BYP on/off. Use the smallest effective BYP value, and confirm timing budgets for sleep-to-active transitions at cold temperatures.

How do I test reverse current when Vout is higher than Vin?

Force Vout > Vin and measure I(Vin) with a shunt or SMU. Test EN low and power-fail scenarios. With reverse-current blocking the current should be near zero. Without RCB, evaluate an ideal-diode path. Log peak and duration to check energy impact and validate no latch-up or brown-out resets.

What is the right minimum-load strategy for nanopower LDOs?

Some devices need a tiny load to maintain regulation or stability. If required, choose a value that does not dominate Iavg, or gate a small current only during active windows. Validate regulation at 0 → I_min → I_step and confirm no oscillation with the intended Cout and ESR range.

How do I balance Iq against PSRR/noise for RF or ADC rails?

Ultra-low Iq can reduce loop bandwidth and PSRR. Budget noise and PSRR at your sensitive frequencies, not just at 100 kHz. Consider a low-noise family member or a small pre-reg plus RC filter. Verify with spectrum and burst-load tests that mirror radio or conversion transients.

Pre-bias start: how do I avoid undershoot and false resets?

Inject a controlled pre-bias near 0.7×Vout_nom and check EN timing versus load enables. Watch for discharge paths or auto-discharge creating glitches. Record overshoot and undershoot with different Cout and BYP settings. Ensure the downstream supervisor threshold and delay tolerate the startup shape.

What changes at cold regarding dropout and startup reliability?

MLCC capacitance and ESR shift lower the effective output pole; dropout margin shrinks as device parameters drift. Sweep VIN downward at low temperature and record regulation error and wake-up segments. Confirm the worst-case VIN_min still meets timing, and consider larger Cout or controlled ramp if needed.

How do I choose divider values without blowing the Iq budget?

Divider current adds directly to Iavg. Use higher resistor values within the device’s bias current and noise limits, and add a small capacitor to shape bandwidth. Verify line regulation and noise. Measure Iq with and without the divider connected to isolate its contribution accurately.

When is an ultra-low-Iq LDO not the best choice?

If your rail needs wideband PSRR, very low noise, or extremely fast wake-up, a slightly higher-Iq regulator or a filtered pre-reg may outperform nano-Iq parts. Compare PSRR at your disturbance frequencies, noise in µV_rms, and t_wake budgets. Prototype both paths and measure with system-realistic loads.

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