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DESAT Short-Circuit Detection (Blanking, Filter, Soft Turn-Off)

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Core Takeaway

DESAT short-circuit detection protects power switches by monitoring abnormal VCE/VDS rise during conduction and triggering a controlled shutdown. The winning design is the one that trips fast on real shorts while staying immune to dv/dt noise via correct threshold budgeting, blanking/filter tuning, and a safe fault-handling policy.

H2-01. Definition & Scope of DESAT Short-Circuit Detection Boundary + Map

Intent: Define DESAT in one minute: it detects an abnormal rise of VCE/VDS during conduction (loss of saturation / hard fault), then initiates a controlled turn-off and fault reporting.

Core idea: detection is only meaningful when the switch is expected to be fully on. Therefore, blanking/filtering is treated as part of the detection chain—not an optional add-on.

This page covers / does NOT cover

  • Covers: DESAT chain blocks (sense network → compare/logic → turn-off behavior → report/disable path).
  • Covers: programmable knobs (threshold, blanking, filter, soft turn-off current/shape, latch/auto-retry policy).
  • Covers: driver/isolator/controller interfaces (fault propagation, safe disable, recovery handshake).
  • Does NOT cover: device physics lectures (carrier dynamics / deep VCE(sat) theory). Only engineering decision variables are used.
  • Does NOT cover: full layout handbook. Only minimum placement/return-path constraints are stated; detailed routing belongs to the Layout/Gate Loop page.

Must-answer questions (engineering view)

Q1 — What faults does DESAT target, and why is it broadly used?
DESAT targets faults where the switch cannot maintain low VCE/VDS while commanded on (hard short, severe over-current, or loss-of-saturation conditions). It is widely used because it monitors a device-centric symptom (abnormal on-state voltage) that remains meaningful across many power stages, while avoiding dependency on a single current-sense element’s bandwidth/placement.

Q2 — When is monitoring allowed, and when must it be blocked?
Monitoring is allowed after the turn-on transient where VCE/VDS is expected to settle to a low value. Monitoring must be blocked during the turn-on interval where normal VCE/VDS overshoot exists and dv/dt injection is strongest; this is the purpose of blanking and complementary filtering.

Protection chain overview (Detect → Decide → Turn-off → Report)

Detect

Sense VCE/VDS rise during conduction via DESAT network.

Decide

Apply blanking + filtering to reject turn-on/dv/dt artifacts.

Turn-off

Controlled discharge (soft turn-off) to manage di/dt and overvoltage.

Report

Fault flag + safe disable path; latch or auto-retry per policy.

DESAT position in the gate-driver protection loop Block diagram showing PWM controller, gate driver with DESAT blocks, power switch, and fault feedback path. PWM / Controller PWM Commands Gate Driver IC Input / Interlock DESAT Sense Blanking / Filter Soft Turn-Off Controlled di/dt Fault Policy Latch / Auto-retry Power Switch VCE / VDS Fault PWM Gate Sense /FLT Disable
Figure 1 — DESAT is a closed-loop protection path: device symptom (VCE/VDS rise) → decision (blanking/filter) → controlled turn-off → fault report/disable.

H2-02. Short-Circuit Events & Why Blanking Exists Motivation + Risk

Intent: classify short-circuit behaviors by time scale and waveform shape to explain why blanking is mandatory and why false trips occur without a controlled decision window.

Key outcome: blanking separates “normal turn-on overshoot” from “fault-driven sustained high VCE/VDS,” so the protection chain can be both fast and noise-robust.

Event taxonomy (engineering view, no terminology debate)

  • Turn-on into fault: the switch is commanded on while the load path is already shorted (worst case for energy rise).
  • Short during conduction: the switch is already on; VCE/VDS rises abnormally as the device loses saturation margin.
  • Half-short / false turn-on: dv/dt and Miller coupling create unintended current while the system “believes” it is off.

Out-of-scope reminder: detailed SOA derivations are not expanded here. The page uses decision variables: response window, overshoot peak, and repeatability.

Must-answer questions (risk framing)

Q1 — Why is peak current not the only danger?
The dominant risk is energy accumulation within the protection response window plus overvoltage during turn-off. Two designs with similar peak current can have very different outcomes if t_detect + t_turnoff differs or if the turn-off di/dt is uncontrolled.

Q2 — Why does VCE/VDS rise at turn-on even in normal operation?
During turn-on, current rises before the device reaches its lowest on-state voltage region; VCE/VDS can show a normal overshoot and settling behavior. A DESAT comparator would interpret this as a fault unless the decision is blocked by blanking and shaped by filtering.

Blanking design intent (decision window logic)

  • Purpose: ignore the interval where normal turn-on VCE/VDS behavior is expected.
  • Too short: false trips at turn-on, especially under high dv/dt and temperature-dependent leakage.
  • Too long: missed or delayed detection; energy grows before soft turn-off begins.
  • Engineering rule: blanking is defined by a waveform region, not by a preference—its boundary must be validated by fault injection and repeatability checks.
Turn-on transient versus real short-circuit behavior Two waveform sketches comparing normal turn-on VCE/VDS settling to a real short where VCE/VDS stays high; blanking window highlighted. VCE/VDS time turn-on blanking normal settling fault stays high monitoring allowed compare VCE/VDS goal of blanking ignore normal overshoot still catch real faults
Figure 2 — Blanking blocks the normal turn-on overshoot region. After blanking, DESAT compares whether VCE/VDS settles low (normal) or stays abnormally high (fault).

H2-03. DESAT Principle: What Is Actually Measured Signal Reality

Intent: clarify what the DESAT circuit truly “sees.” VCE/VDS is mapped through a high-voltage diode and a shaping network into a comparator input, forming a practical de-saturation decision.

A DESAT pin does not observe raw VCE/VDS. It observes a low-voltage node waveform that includes diode behavior, RC dynamics, bias/leakage, and reset conditions—these determine both false trips and missed trips.

Mechanism decomposition: Sense → Level shift → Compare

Sense

Observe a device symptom: VCE/VDS rising abnormally while the switch is commanded on.

Level shift

Use an HV diode + network to translate high-voltage behavior into a safe comparator node.

Compare

After blanking/filtering, a threshold decision drives fault latch and turn-off behavior.

Must-answer questions

Q1 — What waveform does the DESAT pin see?
The DESAT node typically cycles through three phases: reset/blanking (decision blocked, node forced to a known state), monitoring (node stays low under normal conduction), and fault escalation (node rises beyond the effective threshold when VCE/VDS remains abnormally high).

Q2 — Why is an HV diode and a discharge/reset path required?
The HV diode isolates the comparator node from high-voltage energy and defines a one-way mapping from VCE/VDS into the sense node. A discharge/reset path prevents residual node charge from corrupting the next switching cycle, preserving repeatability across temperature and tolerance.

Pass criteria template (placeholders)

  • Repeatability: DESAT node starts each cycle from a known state within X µs.
  • Normal immunity: no false trip across dv/dt stress up to Y kV/µs (system-defined).
  • Fault detectability: a sustained abnormal VCE/VDS condition forces a trip within N µs after monitoring is enabled.
Typical DESAT measurement network: HV diode, RC shaping, comparator, current source, and fault latch Block diagram showing VCE/VDS mapped through an HV diode and RC to a comparator with blanking and fault latch producing /FLT and disable. Power Switch VCE / VDS Switch Node HV Diode DESAT Node R_limit C_filter Reset / Bleed Comparator V_th Blanking Fault Latch /FLT Controlled Turn-Off Current Source Gate Disable Sense Level shift Compare
Figure 3 — A practical DESAT chain maps VCE/VDS into a safe comparator node through an HV diode and RC shaping, then gates the decision via blanking and latches a fault to drive controlled turn-off.

H2-04. Sense Network Design: Threshold, Diode, R/C, Reset Path Design Knobs

Intent: make the external DESAT network engineering-ready: how the effective trip level is formed, how temperature/tolerance shift it, and how reset guarantees a clean start for the next switching cycle.

The network must satisfy two constraints simultaneously: fast detectability (fault crosses threshold within the target window) and false-trip immunity (dv/dt and leakage do not trigger trips during normal operation).

Effective threshold = stacked contributors (engineering budget)

The trip decision is driven by an effective threshold at the DESAT node, influenced by: diode Vf(T), comparator threshold, bias currents through resistance, leakage at high temperature, junction capacitance injection, and RC dynamics.

Offsets & drift

Vf(T), bias/leakage currents, and tolerance shift the node baseline.

Dynamics

R/C shapes how quickly the node reacts versus how much noise is attenuated.

HV diode selection: key parameters and failure risks

  • Reverse voltage: must exceed the worst-case node swing with margin (system-defined).
  • Leakage vs temperature: leakage can lift the node and cause false trips at high temperature.
  • Junction capacitance (Cj): a dv/dt injection path that can spike the DESAT node during switching.
  • Recovery behavior: impacts transient behavior under fast switching; verify under real dv/dt conditions.

R/C trade-off: noise filtering vs response speed

  • Larger R/C: better attenuation of spikes, but slower fault escalation → higher missed-trip risk.
  • Smaller R/C: faster detectability, but higher sensitivity to dv/dt injection → higher false-trip risk.
  • Engineering rule: pick R/C inside a feasibility window defined by response budget (X µs) and immunity stress (Y kV/µs).

Parameter → Impact → Risk → How to decide (placeholders)

C_filter

Impact: spike suppression ↑ / response speed ↓.
Risk: too large → missed trip; too small → false trip.
Decide: meet detect window X, then tune to dv/dt Y.

R_limit

Impact: limits surge current / shapes node dynamics.
Risk: too large → sluggish node; too small → stress/overshoot.
Decide: maintain stability while preserving detect margin N.

Reset / Bleed

Impact: enforces known start state each cycle.
Risk: missing reset → residual charge → inconsistent trips.
Decide: guarantee reset within X µs over temp.

HV diode

Impact: isolation + mapping fidelity.
Risk: leakage/Cj injects noise; inadequate VR causes failure.
Decide: prioritize leakage(T) + Cj for fast-switching stages.

Initial sizing flow (stepwise, repeatable)

  1. Define response budget: total allowed detect + turn-off window = X µs (system requirement).
  2. Define monitoring start: decision begins after blanking ends (from turn-on waveform characterization).
  3. Build a threshold budget: include Vf(T), comparator Vth, bias/leakage, and RC dynamic error (placeholders).
  4. Select HV diode: prioritize reverse voltage margin, low leakage(T), and manageable Cj for dv/dt conditions.
  5. Select R/C: satisfy the response budget first, then tune to avoid false trips under dv/dt stress.
  6. Implement reset/bleed: ensure the DESAT node returns to a known start state before the next cycle.
  7. Validate by injection: confirm both no-false-trip under normal switching and reliable trip under sustained fault.

Notes: numeric values remain system- and device-dependent; placeholders (X/Y/N) are intended for project-specific limits.

Threshold composition breakdown: diode Vf, bias/leakage, Cj injection, and RC dynamics Diagram showing how VCE/VDS maps through a diode to a DESAT node, where contributors like Vf(T), leakage, bias current, junction capacitance, and RC dynamics shift the effective trip level compared against comparator threshold. VCE / VDS Device symptom HV Diode DESAT Node Vf(T) I_bias · R I_leak(T) Cj dv/dt injection RC dynamics Compare V_th Effective Trip Level Budget shifts must be validated over temperature and tolerance
Figure 4 — The DESAT trip point is an engineering budget: diode Vf(T), bias/leakage, Cj injection, and RC dynamics shift the effective trip level that is compared against the internal threshold.

H2-05. Programmable Blanking & Filtering: Avoid False Trips Under dv/dt Core Chapter

Intent: set blanking and filtering so the DESAT decision remains stable under dv/dt injection, switching noise, and Miller coupling—without hiding real short-circuit events.

Blanking and filtering are part of the decision chain. The goal is to reject short-lived injected spikes while preserving sensitivity to sustained abnormal VCE/VDS.

Must-answer questions

What happens if blanking is too short or too long?
Too short: turn-on transient + dv/dt spikes can exceed the effective threshold → false trips and nuisance shutdowns.
Too long: real faults remain masked inside the blanking window → detection is delayed while short-circuit energy accumulates.

What does filtering remove, and how to avoid filtering real faults?
Filtering primarily targets very short spikes and high-frequency ringing. Real de-saturation faults are typically sustained (remain high long enough to exceed the filter’s time constant). Filtering must keep the total response budget within X µs after monitoring is enabled (system-defined).

Where does dv/dt injection enter the DESAT node?
Typical paths include parasitic capacitance coupling from the switch node, diode junction capacitance, ground bounce/common impedance, isolation barrier capacitance, and supply/reference disturbance.

Symptoms → priority suspects → fastest checks

Turn-on false trip instant

Suspects: blanking too short; Cj/dv/dt injection; ringing crosses threshold.
Checks: capture DESAT node vs driver GND; compare with blanking window edges.
First fix: extend blanking; then increase filtering slightly.

High-temp false trip hot

Suspects: diode leakage(T); bias/leakage lifts node; threshold budget shifted.
Checks: repeat at temperature; log baseline node level before switching.
First fix: adjust threshold budget; refine filter; validate leakage margin.

One-phase false trip local

Suspects: local capacitive coupling; layout asymmetry; isolation parasitics; return path difference.
Checks: compare phase-to-phase DESAT node waveforms; swap channels if possible.
First fix: tune per-channel blanking/filter; verify coupling path dominance.

Setting flow (blanking → filter → injection validation)

  1. Set blanking first: exclude the normal turn-on region where VCE/VDS and dv/dt artifacts are expected.
  2. Set filtering next: attenuate narrow spikes and ringing without pushing total response beyond X µs.
  3. Stress injection: validate under worst-case dv/dt (Y kV/µs), temperature, and operating corners.
  4. Re-validate real faults: confirm sustained faults still trip within N µs after monitoring is enabled.

Placeholders: X/Y/N depend on device short-circuit limits, system dv/dt, and protection policy.

dv/dt noise injection paths into the DESAT node and mitigation knobs Diagram showing multiple injection paths (parasitic capacitance, diode Cj, ground bounce, isolation capacitance, supply disturbance) from switching activity into the DESAT node and comparator, with blanking/filter as countermeasures. Switch Node dv/dt Ringing DESAT Node RC Filter Blanking Comparator V_th Mitigations Guard / Shield Kelvin Return Reduce Cj Higher CMTI C_sw Cj Power Loop di/dt GND bounce Isolation C_iso Mitigate
Figure 5 — dv/dt injection reaches the DESAT node through multiple paths (parasitic capacitance, diode Cj, ground bounce, isolation capacitance). Blanking and filtering shape the decision; layout/return/CMTI improvements reduce injection at the source.

H2-06. Soft Turn-Off: Controlled Discharge, Overvoltage Management, and Coordination Action

Intent: explain soft turn-off as a controlled response to a detected fault: limit di/dt to manage VCE/VDS overshoot, while keeping short-circuit energy inside the system budget.

The goal is not “slower by default.” The goal is a shaped discharge that prevents destructive overvoltage and ringing, coordinated with clamp elements and Miller control.

Must-answer questions

Why soft turn-off?
A hard turn-off can create excessive overshoot through loop inductance and resonance. Soft turn-off uses a controlled discharge path to limit di/dt and reduce peak overvoltage.

What if soft turn-off is too soft?
If gate discharge is overly gentle, the device remains in a high-stress region longer: short-circuit energy increases, temperature rises faster, and secondary failure risks increase. The soft stage must complete within X µs and keep overshoot below Y V (placeholders).

Boundary and coordination (interface-only):
Two-level turn-off and active Miller clamp are treated as cooperative blocks: fast exit from danger + gentle overshoot control + suppression of Miller-induced re-turn-on. Detailed implementation parameters remain outside this chapter.

Coordination map (what connects to what)

Overvoltage clamp

Goal: cap VCE/VDS peak while soft turn-off limits di/dt. Validate peak margin under worst-case L_loop.

Active Miller clamp

Goal: prevent false re-turn-on during fault turn-off. Enable timing must not fight controlled discharge.

Two-level turn-off

Goal: fast initial exit, then gentle edge. Soft turn-off may implement or complement this behavior.

Fault latch & policy

Goal: deterministic disable and recovery (latch/auto-retry). Ensure turn-off completes before retry logic.

Hard turn-off versus soft turn-off: overshoot control and gate discharge shaping Waveform comparison showing VCE/VDS overshoot and gate discharge current for hard versus soft turn-off, including a controlled current source and coordination blocks for clamp and Miller clamp. VCE/VDS time fault Hard Soft Ig_off hard pulse controlled Soft turn-off limits di/dt to reduce overshoot while keeping energy within budget Coordinate: Clamp + Miller clamp + Fault latch (interface-level) Clamp Miller clamp Latch Current source
Figure 6 — Hard turn-off can create higher VCE/VDS overshoot and stronger ringing. Soft turn-off shapes gate discharge (controlled Ig_off) to limit di/dt, reducing overshoot while keeping short-circuit energy within the system budget.

H2-07. Fault Handling: Latch, Auto-Retry, Timing, and Safe Disable Paths System Behavior

Intent: define what happens after a valid DESAT event: latch vs auto-retry, retry spacing and cooldown, and deterministic handshakes using /FLT, /EN, and /RDY.

The priority is a safe gate state during the entire fault interval, including across isolation: loss of control or missing signals must default to Gate OFF.

Must-answer questions

When must the fault be latched, and when is auto-retry allowed?
Latch: energy/safety cannot be bounded or the fault is likely persistent. Auto-retry: only when the system tolerates interruption and the retry policy prevents repeated energy injection.

How to prevent retry storms?
Use backoff (retry spacing), a retry budget (count limit), and a cooldown window gated by voltage/temperature/UVLO-clear conditions.

How to guarantee a safe gate state across isolation?
A hardware disable path must override software and must remain effective during signal loss. Gate output must remain in a defined OFF state until recovery criteria are met.

Handshake signals (definition and minimum behavior)

/FLT fault

Meaning: fault asserted for a valid DESAT event.
Minimum: persists through turn-off sequence.
Requirement: visible to controller within X µs (placeholder).

/EN disable

Meaning: explicit enable/disable control.
Minimum: hardware-level override of PWM.
Requirement: loss-of-signal defaults to OFF (fail-safe).

/RDY ready

Meaning: channel is re-armed for monitoring.
Minimum: blanking/reset complete and safe to accept PWM.
Requirement: must not assert before the node is reset.

Auto-retry policy template (placeholders)

  • Retry count limit: N attempts → then latch.
  • Backoff schedule: Δt = X → Y → Z (stepwise or exponential).
  • Cooldown gate: (Vbus > A) AND (Temp < B) AND (UVLO clear).
  • Exit-to-latch: persistent fault time > T or retry budget exceeded.

Verification targets: no retry storm under persistent fault; recovery time bounded after fault clears; gate remains OFF during fault interval.

Fault handling state machine: Normal, Blanking, Monitor, Fault, Soft turn-off, Latch or Retry, Ready State machine diagram showing transitions from normal operation through blanking and monitoring to fault handling, including controlled turn-off, latch versus auto-retry with cooldown/backoff, and ready re-arm. Includes /FLT, /EN, /RDY signaling and a safe disable hardware path. Normal /RDY Blanking Monitor enabled Fault /FLT Soft Turn-Off Latch manual reset Auto-Retry backoff/cooldown Ready re-armed Safe Disable Path /EN Signal loss UVLO Gate OFF PWM done V>Vth action latch retry cool re-arm override
Figure 7 — A deterministic fault state machine ties detection to action and recovery. Latch vs auto-retry is a policy decision guarded by backoff, retry budget, and cooldown. A safe disable path must override software and hold the gate OFF even during signal loss across isolation.

H2-08. High-Side / Isolated Implementation Considerations Real-World

Intent: explain why high-side and isolated implementations are more prone to false trips: larger common-mode steps, reference drift, isolation parasitics, and bias-supply noise coupling into the DESAT decision.

This chapter focuses on principles and verification criteria. Detailed layout rules and isolated power topologies are intentionally out of scope.

Must-answer questions

Why does high-side trip more easily?
High-side domains experience larger switching common-mode movement; parasitic capacitances inject this movement into the DESAT node, shifting the effective threshold and creating edge-correlated false triggers.

Which reference should the DESAT return follow?
The DESAT comparator measures a node relative to its local reference. The return must follow the local (Kelvin) reference of the measured domain; mixing HS/LS references is a common failure mode.

How to manage coupling from isolated bias supplies?
Bias ripple and transients can disturb the comparator reference and DESAT baseline. Validation requires worst-case dv/dt, temperature, and bias-load corners with explicit false-trip metrics.

Common mistakes → fastest checks (field-oriented)

Reference mixed across domains

Symptom: HS false trips while LS stays stable.
Check: measure DESAT node vs HS local reference; compare to LS channel baseline.
Fix: enforce local reference/Kelvin return; keep DESAT loop local.

Isolation parasitic injection (C_iso)

Symptom: false trips correlate with higher dv/dt or higher bus voltage.
Check: sweep dv/dt and observe DESAT spike amplitude scaling.
Fix: improve CMTI margin, reduce coupling, adjust blanking/filter budget.

Bias supply ripple affects baseline

Symptom: trips cluster at certain load or bias switching states.
Check: log DESAT baseline drift with bias load steps.
Fix: decouple/partition bias, verify baseline stability within X (placeholder).

Long/looped DESAT trace

Symptom: phase-dependent or placement-dependent false trips.
Check: compare channels; identify proximity to switch node.
Fix: shorten loop, add guard/shield, maintain symmetric routing.

Validation criteria (placeholders)

  • dv/dt immunity: no false trip up to Y kV/µs at worst-case temperature.
  • Baseline stability: DESAT baseline drift ≤ X (node units) during bias load steps.
  • Fail-safe across isolation: signal loss forces Gate OFF within N µs.
High-side isolated domains: HS/LS split, isolation barrier, common-mode step, and parasitic capacitance paths Diagram showing HS and LS domains separated by an isolation barrier, with switch-node common-mode dv/dt, parasitic capacitance Ciso across the barrier, injection paths into the DESAT node, and local reference/Kelvin return concept. HS domain LS domain Iso Switch node dv/dt HO/HS DESAT node Comparator Local ref Controller /EN /FLT /RDY Isolated bias ripple/noise C_iso Cj C_sw control fault Kelvin
Figure 8 — High-side domains see larger common-mode steps; parasitic capacitances (C_iso, C_sw, diode Cj) inject switching movement into the DESAT node. Use local (Kelvin) reference discipline, adequate CMTI margin, and bias-noise validation to prevent edge-correlated false trips.

H2-09. Validation & Debug Playbook: Fault Injection and Measurement Definitions Executable

Intent: standardize validation as a repeatable engineering process: classify fault-injection coverage, capture the minimum waveforms, and freeze measurement definitions and pass criteria using X/Y/N placeholders.

This section describes test criteria and measurement definitions. It intentionally avoids hazardous procedural details.

Fault injection methods (criteria only)

Hard short worst-case

Purpose: stress detection-to-turn-off completeness.
Focus: t_detect, t_turnoff, V_ov_pk, gate safe-hold.
Record: /FLT timing and disable path behavior.

Controlled short policy

Purpose: validate latch vs auto-retry decisions.
Focus: backoff, retry budget, cooldown gating.
Record: retry spacing sequence and /RDY definition.

Inductive-limited filter margin

Purpose: separate peak-current vs energy/overshoot behavior.
Focus: blanking/filter rejecting noise without missing real faults.
Record: DESAT node shape and comparator crossing duration.

Waveforms to capture (minimum set)

Mandatory (every run) must

VCE/VDS (HV diff)
VG (gate)
DESAT pin / node
/FLT (fault)
Vbus (bus)

Recommended (debug) optional

/EN (disable path)
/RDY (re-arm definition)
Driver/bias rails
Comparator ref node (if available)

Trigger discipline: use a consistent time reference such as /FLT assert or monitor enable end. Avoid mixed triggers across runs.

Measurement definitions (freeze start/stop) + pass criteria placeholders

t_detect

Start: monitor enabled (blanking ends).
Stop: /FLT asserts (or comparator trip, fixed per system).
Pass: t_detect ≤ X µs.

t_to_start (turn-off start)

Start: /FLT asserts.
Stop: VG enters controlled discharge region.
Pass: t_to_start ≤ Y µs.

t_off_complete

Start: /FLT asserts.
Stop: VG below off-level (or driver output confirms OFF).
Pass: t_off_complete ≤ N µs.

V_ov_pk (overshoot peak)

Window: from turn-off start through ring-down interval.
Metric: peak VCE/VDS in the defined window.
Pass: V_ov_pk ≤ X (units placeholder).

False-trip rate

Condition: no injected fault; worst dv/dt + temperature corner.
Metric: false trips per Y cycles.
Pass: ≤ N / Y.

Recovery behavior

Auto-retry: backoff + budget + cooldown must hold.
Latch: reset criteria fixed and deterministic.
Pass: no retry storm; persistent fault → latch ≤ T.

All measurement start/stop definitions must be documented alongside captured waveforms to prevent cross-lab interpretation drift.

Debug playbook (symptom → first checks → minimal verification)

Trips at turn-on edge

First checks: blanking window coverage; DESAT spike aligned to dv/dt.
Minimal verification: extend blanking; adjust filter budget; re-measure t_detect margin.

Trips at high temperature

First checks: diode leakage and baseline drift; threshold budget margin.
Minimal verification: log DESAT baseline vs temperature; confirm pass margin ≥ X.

Only high-side trips

First checks: reference mixing across domains; C_iso injection dominance.
Minimal verification: compare HS vs LS DESAT node; sweep dv/dt and correlate spike scaling.

Retry storm after faults

First checks: backoff not applied; cooldown gate too permissive; retry budget missing.
Minimal verification: force persistent fault and confirm latch ≤ T and retry spacing increases.

Validation bench: DUT, fault injection fixture, probes, trigger source, and recorded signals Block diagram of a validation setup showing bus supply, fault injection fixture, DUT (driver and power switch), measurement probes for VCE/VDS, gate voltage, DESAT node, logic signals /FLT /EN /RDY, bus voltage, and an oscilloscope/recorder with a defined trigger source. Bus supply Vbus Fault injection fixture hard controlled inductive DUT Gate driver Switch DESAT node / pin /FLT /EN /RDY Scope / recorder Trigger /FLT or monitor Record list VCE/VDS VG DESAT /FLT Vbus HV diff probes
Figure 9 — A repeatable bench diagram enumerates measurement points and a consistent trigger reference. Capture VCE/VDS, VG, DESAT node, /FLT, and Vbus for every run; keep start/stop definitions fixed to avoid cross-lab drift.

H2-10. Engineering Checklist: Design → Bring-Up → Production Gates

Intent: convert DESAT design and validation into checkable gates. Each gate requires evidence artifacts (definitions, logs, waveforms, and limit templates) to prevent ambiguous sign-off.

Design gate (Gate 1)

Threshold budget completed (Vf + comparator + leakage + tolerance)

Evidence: budget sheet with margin ≥ X (placeholder).

Blanking and filter initial settings defined and justified

Evidence: blanking window and filter budget tied to dv/dt assumptions.

Soft turn-off strategy defined (di/dt control + overshoot target)

Evidence: waveform definition card; V_ov_pk target ≤ X (placeholder).

Fault policy frozen (Latch vs Auto-retry, backoff, cooldown, retry budget)

Evidence: policy template with N/X/Y/Z placeholders.

Safe disable path defined (hardware override + fail-safe default OFF)

Evidence: truth table and timing requirement ≤ X µs (placeholder).

Measurement definitions frozen (start/stop for all metrics)

Evidence: definitions for t_detect, t_off_complete, V_ov_pk, false-trip rate.

Bring-up gate (Gate 2)

Fault injection coverage completed (hard / controlled / inductive-limited)

Evidence: waveform set with mandatory channels and fixed trigger reference.

False-trip sweeps completed (dv/dt, temperature, bias load corners)

Evidence: sweep matrix and false-trip rate ≤ N/Y (placeholder).

Handshake chain verified (/FLT, /EN, /RDY) including loss-of-signal OFF

Evidence: logic timing capture and defined /RDY meaning.

HS vs LS comparison completed (injection and false-trip correlation)

Evidence: channel comparison captures and root-cause notes if asymmetric.

All pass criteria met (t_detect, turn-off, V_ov_pk, recovery behavior)

Evidence: summary card with X/Y/N placeholders filled for sign-off.

Production gate (Gate 3)

Fixture tests defined (functional /FLT and hard-disable /EN)

Evidence: production test flow with acceptance limits.

Limits frozen (t_detect, t_off_complete, V_ov_pk, false-trip rate)

Evidence: limit table (placeholders) consistent with validation definitions.

Record fields frozen (settings version, conditions, trace IDs)

Evidence: logging template for trace file naming and metadata.

Safety/documentation alignment completed

Evidence: consistent wording across test report, sign-off, and audit materials.

Gate checklist flow: Design gate, Bring-up gate, Production gate with key criteria blocks Flow diagram with three sequential gates. Each gate contains key criteria blocks such as threshold budget, blanking/filter, soft turn-off, policy, safe disable, injection coverage, sweeps, handshake verification, and production limits/records. Gate 1 Design Threshold budget Blanking / Filter Soft turn-off Policy (N/X/Y) Safe disable Gate 2 Bring-up Fault injection False-trip sweeps Handshake HS/LS compare Pass (X/Y/N) Gate 3 Production Fixture tests Limits Record fields Docs alignment Release sign-off sign-off
Figure 10 — Three gates convert DESAT requirements into checkable evidence. Design freezes budgets and definitions; bring-up proves behavior through injection and sweeps; production freezes limits and record fields for consistent sign-off and audit.

H2-11. Applications & IC Selection (Placed Before FAQ)

Intent: Convert the page content into an executable routing + selection logic. This section only maps scenarios → priority metrics → reference IC part numbers, and links back to the deep-dive chapters.

Application Playbooks (Compositions Only)

Each playbook is a “module bundle” that should already be defined and validated in earlier chapters.

Traction / Industrial
IGBT / SiC

Bundle: DESAT + programmable blanking/filter + soft turn-off + latch-first policy + robust /FLT + safe disable path.

Reference ICs: TI UCC5870-Q1, TI UCC21736-Q1, Infineon 1ED3491MU12M, Infineon 1ED3321MC12N

High-Frequency Hard-Switch
SiC / GaN

Bundle: high CMTI + strong dv/dt false-trip immunity (blanking/filter) + tight timing + controlled fault turn-off.

Reference ICs: TI UCC21750, Infineon 1ED3491MU12M, Infineon 1ED3320MC12N, Skyworks Si8285

Multi-Bridge / Multi-Channel
Fault Propagation

Bundle: channel consistency + coordinated shutdown policy (bridge-level safe-off) + deterministic fault reporting.

Reference ICs: Infineon 1ED332xMC12N family (e.g., 1ED3321MC12N), Infineon 1ED34xx family (e.g., 1ED3491MU12M)

Datasheet Field Checklist (DESAT-Centric)

  • DESAT sense path: internal current source, DESAT pin behavior, clamp/reset behavior, leakage considerations.
  • Blanking / masking: adjustable range, programming method (cap/resistor/register), tolerance, and interaction with switching events.
  • Filter: filter type (leading edge / deglitch / RC), effective time constant, noise immunity vs detection delay trade-off.
  • Fault turn-off behavior: soft-off current / two-step turn-off, hard-off fallback condition, and timing relationship to /FLT assertion.
  • Fault policy: latch vs auto-retry support, retry timing knobs, and safe disable path behavior (input-side and output-side).
  • CMTI / dv/dt immunity: specification method, test conditions, and any notes for high-side half-bridge common-mode steps.
  • Timing: propagation delay, delay matching, fault response delay, and turn-off delay under fault mode.
  • Supplies & UVLO: separate UVLO thresholds (ON/OFF), dual-supply capability (+VG / −VGOFF), and sequencing requirements.
  • Package / creepage: reinforced isolation rating, creepage/clearance, temperature grade, and thermal limits.

Rule of use: the checklist defines “what to read”; earlier chapters define “how to set/validate”.

Scenario → Priority Metrics → Example IC Part Numbers

Selection rules with reference IC part numbers (verify latest datasheets / collateral)
Scenario Priority metrics to rank first Reference ICs (part numbers)
Traction / Industrial inverter
IGBT / SiC
Latch-first policy, soft-off controllability, blanking/filter programmability, deterministic /FLT + safe disable path. TI UCC5870-Q1
TI UCC21736-Q1
Infineon 1ED3491MU12M
TI ISO5852S / ISO5852S-Q1
High dv/dt hard-switch
SiC / GaN
dv/dt false-trip margin (blanking/filter), CMTI, fault reaction time, controlled fault turn-off behavior. TI UCC21750 / UCC21750-Q1
Infineon 1ED3320MC12N
Infineon 1ED3491MU12M
Skyworks Si8285 / Si8286
Multi-bridge coordination
system-level safe-off
/FLT timing, fault propagation strategy, channel-to-channel timing consistency, repeatable disable path across isolation. Infineon 1ED3321MC12N
Infineon 1ED3322MC12N
Infineon 1ED3491MU12M
TI UCC21732
Compact BOM / retrofit
legacy platforms
Minimal external parts for DESAT, clear fault outputs, predictable soft shutdown, ease of layout for DESAT node. ADI ADuM4136
Skyworks Si8285
TI UCC21710
Broadcom ACPL-339J (interface)

“Reference ICs” are examples to anchor the selection logic. Final choice must match isolation rating, safety goals, supply rails, thermal limits, and availability.

Figure 11 — Selection Map (Scenario → Metrics → Jump Links)

Use this map to route from a system scenario to the exact chapter that defines settings and validation criteria.

Scenarios Key Metrics Jump to Sections Traction / Industrial IGBT / SiC High dv/dt Hard-Switch SiC / GaN Multi-Bridge Systems Fault propagation Compact BOM / Retrofit Legacy platforms Blanking + Filter False-trip margin Soft Turn-Off Overvoltage control Fault Policy Latch / Retry / Disable High-Side / Isolation CMTI / return reference H2-05 Blanking & Filtering H2-06 Soft Turn-Off H2-07 Fault Handling H2-08 High-Side / Isolated H2-09 Validation & Debug H2-10 Engineering Checklist

Mapping rule: scenario defines the first metric to optimize; validation chapter defines the pass criteria (X/Y/N placeholders) and fault-injection definitions.

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H2-12. FAQs (DESAT Short-Circuit Detection)

Scope: field debug and acceptance disputes only. Each answer is fixed to 4 lines: Likely cause / Quick check / Fix / Pass criteria (placeholders X/Y/N).

12 questions No new knowledge domains Data-driven pass criteria No image (per rule)
Blanking set longer, still trips at turn-on—first suspect dv/dt injection path or diode leakage?
Likely cause

dv/dt injection into the DESAT node dominates, or the HV diode leakage/bias shifts the node upward during the edge.

Quick check

Overlay DESAT node and switch-node dv/dt; if the DESAT spike scales with dv/dt, it is injection; if baseline rises with temperature/time, it is leakage drift.

Fix

Prioritize injection hardening: reduce coupling (reference return discipline), then increase deglitch/filter slightly; if leakage-driven, select lower-leakage HV diode and tighten reset path. (See H2-05/H2-08)

Pass criteria

False trips ≤ N per Y turn-ons at worst dv/dt and temperature; DESAT baseline drift ≤ X (units placeholder).

No trip during a real short—threshold too high or blanking too long?
Likely cause

DESAT threshold budget is too high, or blanking/masking extends past the short-circuit onset so monitoring never becomes effective in time.

Quick check

Confirm the monitor enable moment (blanking end) occurs before the VCE/VDS abnormal rise; then check whether the DESAT node ever crosses the comparator threshold during the event window.

Fix

Reduce blanking to the minimum that covers turn-on transient, then lower the effective threshold (budget margin) by adjusting the sense network parameters and verifying reset behavior. (See H2-05/H2-04)

Pass criteria

t_detect ≤ X µs from monitor enable; missed-trip count = 0 over N injected events at defined conditions.

Trips only at high temperature—diode leakage or comparator bias drift?
Likely cause

HV diode leakage increases and shifts the DESAT node baseline, or comparator/bias currents drift and reduce effective threshold margin.

Quick check

Measure DESAT baseline (no fault) across temperature and log the required headroom to threshold; check whether drift correlates with diode temperature vs driver bias rails.

Fix

Select a lower-leakage HV diode, tighten the reset/discharge path, and re-balance the threshold budget to preserve hot-corner margin without extending blanking. (See H2-04)

Pass criteria

Hot-corner false-trip rate ≤ N/Y; DESAT baseline-to-threshold margin ≥ X (units placeholder) over temperature range.

Trips only on high-side—common-mode transient or wrong reference return?
Likely cause

High-side common-mode steps inject into the DESAT node through isolation parasitics, or the DESAT return reference mixes domains (wrong local reference / non-Kelvin return).

Quick check

Compare HS vs LS DESAT node waveforms at the same dv/dt; if HS shows spikes aligned to common-mode transitions, injection dominates; if baseline offsets, reference return is wrong.

Fix

Enforce local reference discipline (Kelvin/local return), minimize parasitic coupling across the barrier, and tune filter only after reference integrity is verified. (See H2-08/H2-05)

Pass criteria

HS false trips ≤ N/Y at worst dv/dt; HS/LS t_detect mismatch ≤ X µs under identical test conditions.

Soft turn-off works but overvoltage still high—di/dt path or clamp coordination?
Likely cause

The effective di/dt remains high due to the current path inductance and loop parasitics, or the clamp network is not coordinated with the soft-off profile.

Quick check

Check whether VCE/VDS overshoot peak aligns with the steepest VG discharge slope; compare overshoot with and without clamp engagement to confirm coordination.

Fix

Adjust the soft-off profile (two-step / current source strength) and coordinate clamp timing/threshold; validate that the gate is held off against Miller during the ring-down window. (See H2-06)

Pass criteria

V_ov_pk ≤ Y (units placeholder); fault-to-off_complete ≤ X µs; no re-turn-on events over N injected faults.

Auto-retry causes repeated faults—retry storm or insufficient cooldown?
Likely cause

Auto-retry interval is too short or lacks backoff/count budget, causing repeated energy injection into a persistent fault (retry storm).

Quick check

Log retry spacing and count; if intervals are constant and rapid with no cooling window, policy is missing backoff/cooldown gating.

Fix

Add exponential/stepped backoff, enforce cooldown window, and cap total retries before latch; ensure /RDY truly indicates re-armed safe state. (See H2-07)

Pass criteria

Max retries ≤ N; cooldown ≥ Y ms; persistent fault leads to latch within X total attempts.

One phase trips more in multiphase—layout asymmetry or DESAT RC tolerance?
Likely cause

Asymmetric coupling/return path or component tolerance (RC/diode) shifts threshold and filtering between phases, reducing margin on one channel.

Quick check

Swap the DESAT RC/diode between phases; if the issue follows components, it is tolerance; if it stays on the phase, it is layout/return asymmetry.

Fix

Tighten component tolerance and match routing/returns; then re-tune blanking/filter uniformly and verify phase-to-phase skew and false-trip rate. (See H2-04/H2-05)

Pass criteria

Phase-to-phase false-trip delta ≤ X (units placeholder); phase-to-phase t_detect mismatch ≤ Y µs across N cycles.

Scope shows VDS spike but DESAT didn’t trigger—filter too aggressive or sampling window wrong?
Likely cause

Filter/deglitch suppresses the event duration below the comparator recognition window, or monitoring is still masked by blanking when the abnormal rise occurs.

Quick check

Measure the spike duration at the DESAT node (not only VDS); verify whether the node crosses threshold for ≥ the required deglitch time after blanking ends.

Fix

Reduce filter aggressiveness or shorten deglitch; align blanking to cover only turn-on transient; confirm detection timing using the standardized trigger definition. (See H2-05/H2-09)

Pass criteria

Missed-trip count = 0 over N injected events; t_detect ≤ X µs with the agreed trigger definition.

Fault flag asserts but gate doesn’t fully disable—safe disable path across isolation broken?
Likely cause

Fault reporting is functional but the gate output safe state is not enforced due to a broken disable chain, incorrect polarity, or missing fail-safe default OFF.

Quick check

Correlate /FLT assertion with VG and driver output state; if /FLT toggles but VG remains driven or floats, the disable path or output clamp is misconfigured.

Fix

Verify the hard disable path (pin/logic) overrides PWM, confirm default OFF on loss-of-signal, and validate that fault mode forces a deterministic gate state. (See H2-07/H2-10)

Pass criteria

fault-to-off_complete ≤ X µs; VG remains below off-level for ≥ Y ms during fault; loss-of-signal → OFF within N µs.

DESAT false trips during EMI test—filter/blanking vs test coupling path?
Likely cause

EMI coupling injects transient into DESAT node/returns (probe/fixture coupling), and current filter/blanking does not reject the test-specific disturbance shape.

Quick check

Reproduce with identical wiring and grounding; observe whether the DESAT node sees a common-mode coupled spike coincident with test bursts rather than switching edges.

Fix

First correct coupling path (reference and shielding discipline), then tune deglitch/filter; avoid solving a fixture problem purely by extending blanking. (See H2-05/H2-08/H2-09)

Pass criteria

EMI test false trips ≤ N per test run; switching-function detection t_detect ≤ X µs remains within spec after tuning.

After fault, system never recovers—latch mode or reset handshake missing?
Likely cause

Driver is in latch mode without an implemented reset handshake, or /RDY semantics are misunderstood so the controller never re-arms correctly.

Quick check

Check whether /FLT remains asserted, and whether /RDY ever transitions; verify reset condition (pin toggle / power-cycle / command) matches the configured latch behavior.

Fix

Define an explicit reset handshake, confirm polarity/timing, and add a safe re-arm sequence that prevents immediate re-trigger under persistent faults. (See H2-07/H2-10)

Pass criteria

Recovery time to /RDY ≤ Y ms after valid reset; persistent fault must not auto-recover; re-arm attempts ≤ N before latch.

Different labs disagree on SC response time—measurement trigger definition mismatch?
Likely cause

Response time is being measured from different start/stop points (fault injection moment vs blanking end vs comparator trip vs /FLT), causing inconsistent reported numbers.

Quick check

Normalize measurement: freeze start at monitor enable (blanking end) and stop at /FLT assert or gate discharge start (choose one and document).

Fix

Publish a single measurement definition card (trigger source + window), require identical waveform set, and report both t_detect and fault-to-off_complete. (See H2-09)

Pass criteria

Lab-to-lab delta for t_detect ≤ X µs using the same trigger definition; reported metrics include t_detect and fault-to-off_complete with N samples.

Note: These FAQs intentionally stay within DESAT scope (sense network, blanking/filter, soft turn-off, fault policy, isolation, and validation definitions). For layout-only issues, refer to the site’s layout/grounding guidance page.