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µP Supervisor / Reset IC

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What It Solves

Slow ramps & jitter

DC/DC soft-start and cable drops release RESET too early → sporadic boots. Use tight UV/OV/POR thresholds with hysteresis and guaranteed delay/min reset width.

Multi-level fan-out

1.8/3.3/5 V mix causes level issues or slow edges. Prefer open-drain with per-domain pull-ups; validate rise time vs bus capacitance.

MR bounce & EMI

Mechanical bounce, EFT/ESD and ground noise trigger false resets. Add MR debounce/long-press, startup-inhibit, and EMC-safe path.

Cross-brand mismatch

Small differences in thresholds/timing cause field restarts. Match VIT−/VIT+/Vhys/tDelay/tRST/tGLITCH, output type and Isink.

VIT−/VIT+ tolerance & Vhys tDelay · tRST(min) · tGLITCH Open-Drain / Push-Pull · Isink MR debounce · long-press · startup-inhibit Fan-out · per-domain pull-ups · PG OR+delay
  • Vhys ≥ Ripplepp + Measjitter (+ Tempdrift)
  • tDelay ≥ tosc + tPLL + tPWRGD; tRST(min) ≥ tslowest_boot × (2–5)
  • Isink ≥ (Vpullup / RPU) × Nfanout
From pain points to parameterized capabilities Left: slow ramp, multi-level fan-out, MR bounce, cross-brand mismatch. Right: thresholds & hysteresis, timing, output stage, MR policy, fan-out & PG. Slow ramps & jitter Soft-start + drops → early RESET release Multi-level fan-out 1.8/3.3/5 V mix · slow edges MR bounce & EMI Mechanical/EFT/ESD triggers Thresholds & hysteresis (V_IT−/V_IT+ · V_hys) Timing (t_Delay · t_RST(min) · t_GLITCH) Output stage (OD/PP) & I_sink MR policy (debounce · long-press · inhibit) Fan-out & PG OR + delay

Architecture & Signal Levels

Prefer open-drain with per-domain pull-ups (10–47 kΩ) for safe multi-domain fan-out and PG aggregation. Allow push-pull only when all receivers share one domain and VIH/VIL margins hold across temperature. Segment fan-out if total bus capacitance grows; validate rise time and Isink.

  • Cbus ≈ ΣCinput + Ctrace + Cconn; trise(10–90%) ≈ 2.2 × RPU × Cbus
  • Isink ≥ (Vpullup/RPU) × Nfanout × Safety_factor (≥1.2)
  • Cross-board/long cable: tighten RPU (≤22 kΩ), segment fan-out when Cbus > 200 pF or length > 20 cm
  • Build a single timing authority: PG wired-OR + RC/timer → unified RESET release
Open-drain vs push-pull, fan-out domains and PG aggregation Top: open-drain with pull-up and push-pull comparison. Bottom: fan-out to 1.8 V / 3.3 V domains and PG OR plus delay driving RESET release. Open-Drain RESET Per-domain pull-ups · fan-out friendly RPU 10–47 kΩ Isink margin Push-Pull RESET Single domain only · verify VIH/VIL Level margins across temperature Fan-out & PG Aggregation 1.8 V Domain 3.3 V Domain PG OR + Delay RESET Release

Thresholds & Timing

VIT− / VIT+

Undervoltage/overvoltage trip points with tolerance (%, mV). Distinguish slow-ramp vs fast-pulse behavior.

Vhys

≥ ripple + measurement jitter + temp drift. As a rule: ≥ noise p-p × 1.5 for slow ramps.

tDelay

PG satisfied → RESET release. Must cover the slowest domain: oscillator, PLL, power loops, peripherals.

tRST(min)

Minimum reset pulse width ≥ slowest MCU boot path × (2–5).

tGLITCH

µs-class glitch immunity window to ignore EFT, connector bounce, and switch spikes.

Temperature drift

Convert Ref/Comp drift (ppm/°C) to threshold drift and budget it across −40~85/125 °C.

Design rules

  • Vmargin ≥ Ripplepp + ADCLSB-equiv + Tempdrift + Slopeerror
  • trise(10–90%) ≈ 2.2 × RPU × Cbus; trise(max) ≤ min(Receiver spec, EMI target)
  • tDelay ≥ max(tosc, tPLL, tPWR, tmem-init)
  • tRST(min) ≥ tslowest-boot × (2–5)
Thresholds, hysteresis and timing windows Ramp with noise crosses V_IT− and V_IT+; show V_hys, t_Delay, t_RST(min), and t_GLITCH ignore window; RESET released at the right. V_IT− V_IT+ V_hys t_Delay t_RST(min) t_GLITCH (ignore) RESET released

Integration & Sequencing

Build a single timing authority (PG → OR/timer → RESET) to avoid source contention. Use open-drain with per-domain pull-ups for cross-domain fan-out; restrict push-pull to single-domain designs with verified VIH/VIL margins. Gate MR/WDT using startup-inhibit until clock and PLL are stable.

  • Segment fan-out when length > 20 cm or Cbus > 200 pF; add test points per level.
  • Unify PG polarity/levels with small-signal transistors or level shifters.
  • MR path: connector → ESD → series-R/RC → MR pin; align long-press semantics with global reset policy.
  • External RESET should arbitrate over internal BOD/POR; release only after all domains are ready.
PG aggregation, delay and RESET fan-out with startup inhibit PG nodes feed OR and delay to a Reset Authority; output fans out to multiple domains with per-domain pull-ups. Startup-inhibit highlighted. Startup-inhibit Gate MR/WDT until oscillator/PLL/power good PMIC PG LDO PG Clock OK Mem Init PG OR Delay Reset Authority 1.8 V Domain RPU per-domain 3.3 V Domain 5 V Domain

Validation

Slope sweep

0.1 / 0.3 / 1.0 / 2.0 V/ms with ripple (10–50 mVpp). Record VIT−/VIT+, release point, tDelay, tRST(min).

Temperature matrix

−40/−20/25/85/125 °C per grade. Measure threshold drift and timing shifts; repeat ≥10× per point.

Noise & glitch

Inject ±A mV, B–C µs pulses; verify tGLITCH effectiveness; RESET jitter count must be 0.

MR cases

Re-play mechanical bounce; IEC 61000-4-4 EFT, -6 conducted; long-press tolerance; leakage/ground-bounce immunity.

Fan-out & pull-ups

Estimate/measure Cbus; sweep RPU=10/22/33/47 kΩ; check rise-time vs VIH margin; verify Isink.

EMI & routing

Near-end probes on MR/RESET/PG; log crosstalk peaks and return paths; correlate with any mis-reset events.

Recording & pass criteria

  • Each test stores scope screenshots + CSV with worst-case markers; 1,000 power cycles with 0 failures.
  • Trips/releases within spec ± tolerance and budget (slope/noise/temp); tDelay/tRST meet Chapter-3 windows.
  • RESET jitter = 0 under glitch/EFT; EMI peaks ≤ noise budget; fail cases include corrective actions.
Validation matrix: scenarios vs metrics with pass criteria Grid of slope/temperature/noise-MR/fan-out-EMI against metrics (VIT, Vhys, tDelay, tRST, tGLITCH, rise/VIH/I_sink). Right panel lists pass criteria. Validation Matrix V_IT± V_hys t_Delay t_RST t_GLITCH rise/VIH/I_sink Slope (dv/dt) Temperature Noise / MR Fan-out / Pull-ups EMI / Routing Pass Criteria • Trips/releases within spec • t_Delay & t_RST meet windows • t_GLITCH suppresses pulses • 1,000 cycles, 0 failures • RESET jitter = 0 • Rise-time & I_sink OK • EMI peaks ≤ budget • Document corrective actions

Cross-Brand IC Mapping

Map by function fields (output type, thresholds, timing, MR features, Iq, drift, package, AEC-Q) rather than PN-to-PN. Use the table to shortlist and then run the Validation matrix before any production substitution.

Brand Series Sample PN Output / Isink(min) VIT−/VIT+ (tol), Vhys tDelay / tRST(min) / tGLITCH(min) MR features Iq / Drift Package / AEC-Q Why shortlisted
TI TPS389x / TPS38xx / TPS385x TPS3890-Q1 / TPS3851 / TPS38A* OD/PP · ≥8 mA class Tight acc. options; Vhys bins Clear delay/min-width/glitch specs Debounce/long-press via variants or combo (TPS343x) Low Iq; drift bins SOT/TSSOP; Q1 options Precise thresholds; automotive versions available
ST STM706 / 811 / 100x / 671x STM706, STM6719 OD/PP · 5–10 mA class Multi-threshold selections; defined Vhys Fixed/optioned delays; pulse width bins Built-in MR / watchdog options Low Iq variants SOT/SO; some auto-grade Integrated MR/WDT; cost-effective
NXP MC33910 (SBC) MC33910 OD logic interconnect Supervisor embedded in SBC domain Sequenced with internal power tree WDT via SBC config Automotive-grade SBC metrics Auto packages/grade Gateway/ECU integration; PG/RESET mapping by domain
Renesas ISL880xx / 8801x ISL88003, ISL88011 OD/PP · 5–10 mA class Accurate trips; robust Vhys bins Defined delay/pulse windows MR pin options Very low Iq; good drift Small outline; auto options Cold-climate friendly drift
onsemi NCP30x / 31x NCP303, NCP308 OD/PP · 5–10 mA class Many thresholds; Vhys options Programmable/fixed delays; min pulse bins MR available on variants Low Iq choices SOT/TSSOP; some auto Wide community adoption; flexible timing
Microchip MCP131x / 132x MCP1316, MCP1322 OD/PP · 5–8 mA class Multi trip bins; Vhys stated Fixed pulse/delay variants MR options listed Low Iq for battery rails SOT/SOT-23; cost-optimized Great for low-cost, low-power domains
Melexis MLX automotive supervisors/WDT MLX803xx* OD logic · auto grade Automotive trip accuracy & window options Sequenced per auto domain timing Safety-oriented MR/WDT Low Iq; robust drift control Auto packages / AEC-Q Focus on functional safety & harsh temps
Cross-brand mapping by function fields Columns are fields (Output/I_sink, VIT/Vhys, delays/pulse/glitch, MR, Iq/Drift, Package/AEC-Q); rows are brand series; right card shows the substitution flow. Field Mapping Output/I_sink V_IT/V_hys Delay/Pulse/Glitch MR Iq/Drift Pkg/AEC-Q TI TPS389x/38xx/385x ST STM706/811/100x/671x NXP MC33910 (SBC) Renesas ISL880xx/8801x onsemi NCP30x/31x Microchip MCP131x/132x Melexis MLX auto supv OD/PP · ≥8 mA tight / bins well-spec’d combo WDT low / bins Q1 options OD/PP · 5–10 mA multi bins fixed/opt built-in low auto avail OD logic SBC domain tree-seq SBC cfg auto grade auto pkg OD/PP 5–10 mA accurate clear MR pin very low auto opts OD/PP 5–10 mA broad bins prog/fixed variants low std pkgs OD/PP 5–8 mA multi bins fixed MR opts very low cost opt OD auto auto acc auto seq safety robust AEC-Q Substitution Flow 1) Match by fields 2) Shortlist series & PNs 3) Run Validation matrix 4) 1,000 cycles, 0 fails 5) Approve for production

Procurement hooks (paste into BOM remarks)

  • Supervisor/Reset must specify: output type (OD/PP), Isink(min), VIT−/VIT+, Vhys, tDelay, tRST(min), tGLITCH(min), Iq, drift, package, AEC-Q grade.
  • Any cross-brand alternative shall pass the Validation matrix (dv/dt / Temp / Noise-MR / Fan-out / EMI) with evidence (scope + CSV).
  • Multi-domain designs default to Open-Drain with per-domain pull-ups; Push-Pull requires documented VIH/VIL margins across temperature.

BOM Remarks & Procurement Hooks

Copy the clauses below into your BOM. Fill the underscores with project values after lab validation. These enforce open-drain preference, window/timing completeness, EMC robustness, and cross-brand governance.

Output & Levels

  • RESET must be open-drain with ≥10–47 kΩ pull-up to the host I/O rail.
  • Push-pull allowed only in a single domain after documented VIH/VIL and temperature margin checks.
  • Per-domain pull-ups; do not cross-drive domains directly.

Thresholds & Timing

Thresholds: VIT−=__ V, VIT+=__ V, Vhys__ mV. tDelay=__ ms, tRST__ ms, tGLITCH__ µs.

Validate with dv/dt=0.1–2.0 V/ms and injected noise ±__ mV / __ µs; record worst-case CSV + scope.

Manual Reset (MR) & EMC

  • Debounce ≥ __ ms; Long-press ≥ __ ms; Startup-inhibit ≥ __ ms.
  • MR routing includes ESD device + series-R/RC; GPIO direct wiring is prohibited.
  • EFT/ESD test evidence required; RESET jitter must be 0.

Fan-out & Release Authority

  • When Cbus > __ pF or trace > __ cm, add buffering/segmentation.
  • Rise-time ≤ __ ns at the farthest load; verify Isink capability.
  • Adopt a single timing authority: PG → OR/timer → RESET release.

Cross-Brand Governance

  • Alternatives limited to TI / ST / NXP / Renesas / onsemi / Microchip / Melexis.
  • Publish updated cloud mapping + approved substitutes before shipments.
  • Each alternative must pass the Validation matrix (dv/dt / Temp / Noise-MR / Fan-out / EMI).

Paste-as-one-block (compact)

RESET = open-drain, pull-up ≥10–47 kΩ to host I/O rail. Push-pull allowed only in single domain with VIH/VIL & temperature margins documented.
Thresholds: VIT−=__ V, VIT+=__ V, Vhys≥__ mV; tDelay=__ ms, tRST≥__ ms, tGLITCH≥__ µs (validated at dv/dt 0.1–2.0 V/ms; noise ±__ mV / __ µs).
MR: debounce≥__ ms; long-press≥__ ms; startup-inhibit≥__ ms; MR path must include ESD + series-R/RC; GPIO direct connection prohibited.
Fan-out: per-domain pull-ups; when Cbus>__ pF or trace>__ cm add buffering; rise-time≤__ ns; release via single timing authority.
Cross-brand alternatives limited to TI/ST/NXP/Renesas/onsemi/Microchip/Melexis; update cloud mapping & approved list before shipment; pass Validation matrix.
      

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Frequently Asked Questions

What is the boundary between open-drain and push-pull RESET?

Open-drain fits multi-voltage domains and large fan-out; each domain uses its own pull-up and wired-OR is easy. Push-pull is acceptable only in a single, well-controlled domain with verified VIH/VIL margins across temperature. Budget rise time versus Cbus and confirm the sink capability; never cross-drive domains with push-pull.

How tight should POR thresholds be to avoid false starts?

Combine trip accuracy, measurement jitter, ripple, and temperature drift into a single margin. As a rule of thumb, set Vhys ≥ 1.5× ripple peak-to-peak. Specify both VIT− and VIT+ budgets and verify under slow ramps and extremes; release timing must remain consistent at worst-case corners.

Which disturbances does tGLITCH actually block, and how do I test it?

tGLITCH targets microsecond-scale events such as connector bounce, EFT spikes, and load-step induced transients. Use pulse injection to sweep amplitude and width over the B–C µs range and log RESET jitter. Acceptance is zero spurious edges and a minimum blocked pulse width greater than the worst observed disturbance.

How do I set tRST(min) to cover the slowest domain?

Measure worst-case startup for clock oscillation, PLL lock, regulator settling, storage initialization, and peripheral discovery at extreme temperatures. Multiply the slowest observed time by 2–5× for tRST(min). Ensure tDelay aligns the unified release point so the system never starts “half awake.”

What is the impact of slow supply ramps on trip and release?

Slow dv/dt accentuates reference drift and comparator dynamics, increasing chatter near thresholds. Increase Vhys, lengthen tGLITCH, and consider more conservative tDelay. Validate specifically at 0.1–0.3 V/ms; segment fan-out or reduce Cbus when rise-time becomes marginal.

How can a manual-reset (MR) button avoid false resets under EMC stress?

Insert ESD protection and a series-R/RC on the MR trace; never wire MR directly to a general GPIO. Enable debouncing and a long-press state machine, and apply startup-inhibit until clocks and rails are stable. Route away from switching nodes and control return paths to limit ground bounce coupling.

How do I control rise time with large fan-out across domains?

Use per-domain pull-ups, limit Cbus, and add buffering for long traces or heavy loads. Verify 10–90% rise time versus the tightest receiver VIH requirement and EMI goals. Confirm sink capability for worst pull-up values and scale margins when adding connectors or off-board wiring.

How is PG aggregation used to decide RESET release timing?

Create a single authority by wired-OR or active-OR of all relevant PG signals, then add a deterministic delay block. Size the delay to the slowest stabilizing domain—clock, PLL, or power group. The goal is one authoritative release, not competing sources with conflicting polarities or timings.

How do temperature and reference drift enter the threshold budget?

Convert reference/comparator drift in ppm/°C into millivolts at the rail, then add ripple and ADC/jitter terms to form Vmargin. Validate VIT−/VIT+ across the temperature matrix and document worst-case corners. Keep release timing stable under combined dv/dt and temperature stress.

When is push-pull RESET actually preferable?

Use push-pull in a single domain with low Cbus when you need a sharp edge, minimal delay, or cannot tolerate pull-up variability. Before use, verify that every receiver tolerates the asserted level across temperature and supply corners, and confirm the design does not require wired-OR behavior.

How do I coordinate an external RESET with internal BOD/POR?

Treat the external supervisor as the higher-level arbiter. Its release must occur after internal BOD/POR thresholds and timing are safely met. Align polarities and ensure the external release window encompasses the slowest internal path so there is no oscillation or partial initialization.

Which fields must match for cross-brand substitution?

Match output type and Isink, VIT−/VIT+ accuracy, Vhys, tDelay, tRST(min), and tGLITCH(min), plus MR features, Iq/drift, package, and AEC-Q grade. After field matching, re-run the full validation matrix to confirm behavior under dv/dt, temperature, noise, and fan-out stress.