123 Main Street, New York, NY 10001

Topologies (low-/high-side, half/full-bridge, multiphase VR, gate transformer), switch-specific drivers (IGBT/SiC/GaN/LV MOSFET), isolation & integration, protection & control, interfaces & timing, application playbooks, key specs, and design hooks.

Topologies

Low-Side Gate Driver

High peak source/sink, split Rg,on/off, UVLO—great for SR and low-side switches.

Gate-Transformer Driver

Push-pull primary with synchronous secondary—very high isolation for pulsed/RF supplies.

By Switch Technology

IGBT Gate Driver

−VGOFF, DESAT fast SC detect, soft/two-level turn-off—traction/industrial.

SiC MOSFET Driver

High CMTI (100–200 kV/µs), Miller clamp, +18/−3…−5 V options, & <2 µs SC protection.

GaN HEMT Driver

Ultra-fast edges, minimal loop inductance, precise 0–6 V gate control & shoot-through guard.

Isolation & Integration

Isolated Gate Driver

Reinforced isolation, high CMTI and independent HS/LS channels—ideal for SiC/GaN inverters.

Protection & Control

Interfaces & Timing

Application-Focused

PFC + HB/FB/LLC

Main-bridge drivers + SR drivers; tuned for ZVS/ZCS stages.

Key Specs & Selection

UVLO Thresholds

Match device-recommended VG to avoid half-conduction loss.

CMTI & dv/dt

Common-mode transient immunity—top metric for SiC/GaN hard-switch.

Design Hooks & Pitfalls

Bootstrap Sizing

Cboot ≥ (Qg,total + losses)/ΔV; watch diode recovery & dv/dt.

Layout & Grounding

Partition power/control; no return across splits; stagger driver vs power layers.

Thermal & Mismatch

Maintain arm-to-arm symmetry; add thermal coupling and drift compensation.